Defect status in SiC manufacturing

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 3-6

  Berkman, E ^a   Leonard, R T ^a   Paisley, M J ^a   Khlebnikov, Y ^a   O'Loughlin, M J ^a   Burk, A A ^a   Powell, A R ^a   Malta, D P ^a   Deyneka, E ^a   Brady, M F ^a   Khlebnikov, I ^a   Tsvetkov, V F ^a   Hobgood, H McD ^a   Sumakeris, J ^a   Basceri, C ^a   Balakrishna, V ^a   Carter Jr , C H ^a   Balkas, C ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

4HN SiC; Crystal; Defects; Diameter; Dislocation; Micropipe; Optical surface analyzer; PVT; Seeded sublimation; SiC; Silicon carbide; Substrate; Wafer

Indexed keywords

CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; NITROGEN COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; TOPOGRAPHY;

4HN-SIC; DIAMETER; MICROPIPES; OPTICAL SURFACE ANALYZERS; WAFER;

SUBSTRATES;

EID: 77952824713     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.3     Document Type: Conference Paper

References (3)

1. B. Hull et al.: presented at the 2007 ICSCRM, Otsu, Japan, in press.
2. R. Leonard et al.: presented at the 2007 ICSCRM, Otsu, Japan, in press.
3. M. J. O'Loughlin et al.: presented at the 2008 MRS Spring Meeting, San Fransisco, CA, USA, in press.