Effect of nitrogen implantation at the SiO2 /SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel

Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

  Poggi, A ^a   Moscatelli, F ^a   Solmi, S ^a   Armigliato, A ^a   Belsito, L ^a   Nipoti, R ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MOBILITY; CHANNEL REGION; ELECTRICAL CHARACTERISTIC; EXTENDED DEFECT; FREE CARRIER CONCENTRATION; FREE CARRIER DENSITY; GATE OXIDE; HALL EFFECT MEASUREMENT; HIGH DENSITY; IMPLANTATION DAMAGE; INTERFACE STATE DENSITY; INTERSTITIAL NITROGEN; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOSFET CHANNELS; MOSFET PERFORMANCE; MOSFETS; NITROGEN IMPLANTATION; NMOSFETS; OXIDATION TIME; SIC MOSFET; STRONG CORRELATION; TRANSMISSION ELECTRON;

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METAL RECOVERY; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; NITROGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77749292486     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3290975     Document Type: Article

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