A 4.15 kV 9.07-mΩ · cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 99-101

  Nakamura, Tomonori ^a   Miyanagi, Toshiyuki ^a   Kamata, Isaho ^a   Jikimoto, Tamotsu ^a   Tsuchida, Hidekazu ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

High voltage; Low loss; Mo contact; Schottky barrier diode (SBD)

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; MOLYBDENUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

HIGH TEMPERATURE ANNEALING; MOLYBDENUM CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 13444288168     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841473     Document Type: Article

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