Electrical activation of implanted phosphorus ions in [0001]- and [11-20]-oriented 4H-SiC

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9182-9186

  Schmid, F ^a   Laube, M ^a   Pensl, G ^a   Wagner, G ^b   Maier, M ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVATION; FREE ELECTRON CONCENTRATION; HIGH TEMPERATURE; PHOSPHORUS DONOR; PHOSPHORUS IONS; SIC EPILAYERS; TEMPERATURE RANGE;

IONS; SILICON CARBIDE;

PHOSPHORUS;

EID: 0036607417     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1470241     Document Type: Article

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