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Volumn 97, Issue 12, 2005, Pages

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVATION; ION IRRADIATION; SCHOTTKY BARRIERS; SEMICONDUCTOR TECHNOLOGY;

EID: 21744436769     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1928328     Document Type: Article
Times cited : (29)

References (52)
  • 9
    • 0001637312 scopus 로고
    • edited by G. L.Harris (INSPEC, IEE, London
    • K. Wongchotigul, in Properties of Silicon Carbide, edited by, G. L. Harris, (INSPEC, IEE, London, 1995), pp. 157-161.
    • (1995) Properties of Silicon Carbide , pp. 157-161
    • Wongchotigul, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.