Anomalous increase in effective channel mobility on gamma-irradiated p-channel SiC metal-oxide-semiconductor field-effect transistors containing step bunching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 6830-6836

  Lee, Kin Kiong ^a,c   Ohshima, Takeshi ^a   Ohi, Akihiko ^a   Itoh, Hisayoshi ^a   Pensl, Gerhard ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Effective channel mobility; MOSFET; Radiation induced interface traps; Radiation induced oxide trapped charge; Silicon carbide; Step bunching; Surface roughness

Indexed keywords

ELECTRIC PROPERTIES; ELECTROSTATICS; GAMMA RAYS; INTERFACES (MATERIALS); IRRADIATION; SILICON CARBIDE; SURFACE ROUGHNESS;

CHANNEL MOBILITY; EFFECTIVE CHANNEL MOBILITY; RADIATION INDUCED INTERFACE TRAPS; RADIATION INDUCED OXIDE TRAPPED CHARGE; STEP BUNCHING;

MOSFET DEVICES;

EID: 33749044149     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6830     Document Type: Article

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