Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

Semiconductor Science and Technology

Volumn 23, Issue 4, 2008, Pages

  Hamida, A Ferhat ^a   Ouennoughi, Z ^a   Sellai, A ^b   Weiss, R ^c   Ryssel, H ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b SULTAN QABOOS UNIVERSITY   (Oman)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DISTRIBUTION; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; TUNGSTEN COMPOUNDS;

BARRIER INHOMOGENEITIES; SCHOTTKY BARRIER HEIGHTS (SBHS);

SCHOTTKY BARRIER DIODES;

EID: 42449093680     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/4/045005     Document Type: Article

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