Characterization of SiC thermal oxidation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 579-582

  Radtke, C ^a   Brandao R V ^a   Pezzi, R P ^a   Morais, J ^a   Baumvol, I J R ^a   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Ion bombardment; LEIS; Oxidation; SiC; XPS

Indexed keywords

CHARACTERIZATION; FILM GROWTH; ION BOMBARDMENT; IRRADIATION; SCATTERING; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW ENERGY ION SCATTERING (LEIS);

SILICON CARBIDE;

EID: 0036569313     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01296-4     Document Type: Conference Paper

References (10)