Deep-level transient spectroscopy study on double implanted n+ - p and p+ - n 4H-SiC diodes

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 69-75

  Mitra, Souvick ^a   Rao, Mulpuri V ^a   Papanicolaou, N ^b   Jones, K A ^c   Derenge, M ^c   Holland, O W ^d   Vispute, R D ^e   Wilson, S R ^f  

^a George Mason University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF NORTH TEXAS   (United States)

^e Bldg 142   (United States)

^f MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON TRAPS; IMPURITIES; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

DEVICE ELECTRICAL PERFORMANCE; EPITAXIAL LAYERS; JUNCTION DIODES; MULTIPLE ENERGY ACCEPTOR;

SEMICONDUCTOR DIODES;

EID: 0942278046     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1623631     Document Type: Article

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