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Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

Effect of interfacial reactions on electrical properties of Ni contacts on lightly doped n-type 4H-SiC

(2) Han, Sang Youn a Lee, Jong Lam a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; MICROSTRUCTURE; NICKEL; RAPID THERMAL ANNEALING; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY BARRIER HEIGHT; SILICIDATION; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY; WIDE BANDGAP SEMICONDUCTOR;

INTERFACES (MATERIALS);

EID: 0036503593 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1448504 Document Type: Article

Times cited : (53)

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