High temperature high-dose implantation of aluminum in 4H-SiC

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5195-5197

  Saks, N S ^a   Suvorov, A V ^b   Capell, D C ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-IMPLANTATION; DOPANTS; HALL SCATTERING COEFFICIENTS; HOLE DENSITY;

ALUMINUM; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL ACTIVATION; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HALL EFFECT; HIGH TEMPERATURE OPERATIONS; HOLE MOBILITY; ION IMPLANTATION; OHMIC CONTACTS; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SOLUBILITY;

SILICON CARBIDE;

EID: 3142688377     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1764934     Document Type: Article

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