Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC

Applied Surface Science

Volumn 254, Issue 24, 2008, Pages 8106-8110

  Kwietniewski, N ^a,b   Sochacki, M ^b   Szmidt, J ^b   Guziewicz, M ^a   Kaminska, E ^a   Piotrowska, A ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Ir; IrO 2; Schottky; SiC; Surface cleaning; Surface etching

Indexed keywords

DIODES; ETCHING; IN SITU PROCESSING; IRIDIUM; METALLIZING; RAPID THERMAL PROCESSING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON COMPOUNDS;

FORWARD VOLTAGE DROPS; IRO2; REVERSE LEAKAGE CURRENT; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CHARACTERISTICS; SURFACE ETCHING; SURFACE PREPARATION PROCESS;

SURFACE CLEANING;

EID: 52949106107     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.018     Document Type: Article

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