메뉴 건너뛰기




Volumn 21, Issue 6, 2006, Pages

Heterojunctions and superlattices based on silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC POWER SYSTEMS; ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; SUPERLATTICES;

EID: 33646792943     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/R01     Document Type: Article
Times cited : (159)

References (135)
  • 1
    • 0002349831 scopus 로고
    • Uber die Krystalle des Carborundums
    • 0044-2968
    • Baumhauer H 1912 Uber die Krystalle des Carborundums Z. Kristallogr. 50 33
    • (1912) Z. Kristallogr. , vol.50 , pp. 33
    • Baumhauer, H.1
  • 2
    • 0004933950 scopus 로고
    • Uber die Modificationen des Carborundums und die erscheinung der Polytypie
    • 0044-2968
    • Baumhauer H 1915-1920 Uber die Modificationen des Carborundums und die erscheinung der Polytypie Z. Kristallogr. 55 249
    • (1915) Z. Kristallogr. , vol.55 , pp. 249
    • Baumhauer, H.1
  • 3
    • 0012458777 scopus 로고
    • Polytypism in one dimension
    • 10.1107/S0365110X55000893 0365-110X
    • Schneer C J 1955 Polytypism in one dimension Acta Crystallogr. 8 279
    • (1955) Acta Crystallogr. , vol.8 , Issue.5 , pp. 279
    • Schneer, C.J.1
  • 5
    • 0002944457 scopus 로고
    • Studies on silicon carbide
    • 0003-004X
    • Ramsdell L S 1947 Studies on silicon carbide Am. Mineral. 32 64
    • (1947) Am. Mineral. , vol.32 , pp. 64
    • Ramsdell, L.S.1
  • 6
    • 0001690286 scopus 로고
    • Nonequivalent sites and multiple donor and acceptor levels in SiC polytypes
    • 10.1103/PhysRev.127.1878 0031-899X
    • Patric L 1962 Nonequivalent sites and multiple donor and acceptor levels in SiC polytypes Phys. Rev. 127 1878
    • (1962) Phys. Rev. , vol.127 , Issue.6 , pp. 1878
    • Patric, L.1
  • 8
    • 0000696132 scopus 로고
    • Polytypism in SiC crystals
    • 0365-110X
    • Jagodzinskii H 1949 Polytypism in SiC crystals Acta Crystallogr. 2 201
    • (1949) Acta Crystallogr. , vol.2 , pp. 201
    • Jagodzinskii, H.1
  • 9
    • 0033356629 scopus 로고    scopus 로고
    • Optoelectronic properties and applications of rare-earth-doped GaN
    • 0883-7694
    • Steckl A L and Zavada J M 1999 Optoelectronic properties and applications of rare-earth-doped GaN MRS Bull. 24 33
    • (1999) MRS Bull. , vol.24 , pp. 33
    • Steckl, A.L.1    Zavada, J.M.2
  • 10
    • 0242665546 scopus 로고    scopus 로고
    • Properties of free-standing 3C-SiC monocrystals grown on undulant-Si(0 0 0 1) substrate
    • 0255-5476
    • Nagasaws H, Yagi K, Kawahara T and Hatta N 2003 Properties of free-standing 3C-SiC monocrystals grown on undulant-Si(0 0 0 1) substrate Mater. Sci. Forum 433-436 3
    • (2003) Mater. Sci. Forum , vol.433-436 , pp. 3
    • Nagasaws, H.1    Yagi, K.2    Kawahara, T.3    Hatta, N.4
  • 12
    • 0019590863 scopus 로고
    • Wavelength-modulated absorption in SiC
    • 10.1016/0038-1098(81)91070-X 0038-1098
    • Humphreys R G, Bimberg D and Choyke W J 1981 Wavelength-modulated absorption in SiC Solid State Commun. 39 163
    • (1981) Solid State Commun. , vol.39 , Issue.1 , pp. 163
    • Humphreys, R.G.1    Bimberg, D.2    Choyke, W.J.3
  • 17
    • 0042475917 scopus 로고
    • Optical absorption in the 0.6 micrometer range and structure of the conduction band in 6H α-SiC
    • Dubrovskii G B and Radovanova E I 1969 Optical absorption in the 0.6 micrometer range and structure of the conduction band in 6H α-SiC Sov. Phys. Solid State 11 545
    • (1969) Sov. Phys. Solid State , vol.11 , pp. 545
    • Dubrovskii, G.B.1    Radovanova, E.I.2
  • 18
    • 0015630083 scopus 로고
    • Optical absorption associated with superlattice in silicon carbide crystals
    • 0370-1972 b
    • Dubrovskii G B, Lepneva A A and Radovanova E I 1973 Optical absorption associated with superlattice in silicon carbide crystals Phys. Status Solidi b 57 423
    • (1973) Phys. Status Solidi , vol.57 , Issue.1 , pp. 423
    • Dubrovskii, G.B.1    Lepneva, A.A.2    Radovanova, E.I.3
  • 19
    • 0017490363 scopus 로고
    • Energy band structure and optical spectra of silicon carbide
    • Dubrovskii G B and Lepneva A A 1977 Energy band structure and optical spectra of silicon carbide Sov. Phys. Solid State 19 729
    • (1977) Sov. Phys. Solid State , vol.19 , pp. 729
    • Dubrovskii, G.B.1    Lepneva, A.A.2
  • 20
    • 0018038195 scopus 로고
    • Interband optical absorption in semiconductors with one-dimensional electronic superlattice
    • 0370-1972 b
    • Dubrovskii G B, Pavlov S T and Vershinin M S 1978 Interband optical absorption in semiconductors with one-dimensional electronic superlattice Phys. Status Solidi b 90 429
    • (1978) Phys. Status Solidi , vol.90 , Issue.1 , pp. 429
    • Dubrovskii, G.B.1    Pavlov, S.T.2    Vershinin, M.S.3
  • 21
    • 0031675060 scopus 로고    scopus 로고
    • Band structure interpretation of the optical transitions between low-lying conduction bands in n-type doped SiC polytypes
    • 0255-5476
    • Lambrecht W R L, Limpijumnong S, Rashkeev S N and Segall B 1998 Band structure interpretation of the optical transitions between low-lying conduction bands in n-type doped SiC polytypes Mater. Sci. Forum 264-268 271
    • (1998) Mater. Sci. Forum , vol.264-268 , pp. 271
    • Lambrecht, W.R.L.1    Limpijumnong, S.2    Rashkeev, S.N.3    Segall, B.4
  • 22
    • 12944300459 scopus 로고    scopus 로고
    • Determination of the polarization dependence of the free-carrier- absorption in 4H-SiC at high-level photoinjection
    • 0255-5476
    • Grivickas V, Galesckas A, Grivickas P and Linnors J 2000 Determination of the polarization dependence of the free-carrier-absorption in 4H-SiC at high-level photoinjection Mater. Sci. Forum 338-342 555
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 555
    • Grivickas, V.1    Galesckas, A.2    Grivickas, P.3    Linnors, J.4
  • 23
    • 0033685895 scopus 로고    scopus 로고
    • Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC
    • 0255-5476
    • Sridhara S G, Bai S, Shigltchoff O, Devaty R P and Choyke W J 2000 Absorption bands associated with conduction bands and impurity states in 4H and 6H SiC Mater. Sci. Forum 338-342 551
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 551
    • Sridhara, S.G.1    Bai, S.2    Shigltchoff, O.3    Devaty, R.P.4    Choyke, W.J.5
  • 24
    • 12944260705 scopus 로고    scopus 로고
    • Theory of below gap absorption bands in n-type SiC polytypes; Or, how SIC got its colors
    • 0255-5476
    • Lambrecht R L, Limpijumnong S, Rashkeev S N and Segall B 2000 Theory of below gap absorption bands in n-type SiC polytypes; or, how SIC got its colors Mater. Sci. Forum 338-342 550
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 550
    • Lambrecht, R.L.1    Limpijumnong, S.2    Rashkeev, S.N.3    Segall, B.4
  • 25
    • 30244506276 scopus 로고
    • Superstructure, energy spectrum, and polytypism of silicon carbide crystals
    • Dubrovskii G B 1972 Superstructure, energy spectrum, and polytypism of silicon carbide crystals Sov. Phys. Solid State 13 2107
    • (1972) Sov. Phys. Solid State , vol.13 , pp. 2107
    • Dubrovskii, G.B.1
  • 28
    • 8644280474 scopus 로고    scopus 로고
    • Impact ionization in α-SiC and avalanche photoamplifiers
    • 0255-5476
    • Sankin V I 2004 Impact ionization in α-SiC and avalanche photoamplifiers Mater. Sci. Forum 457-460 701
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 701
    • Sankin, V.I.1
  • 29
    • 8644244730 scopus 로고    scopus 로고
    • Specificity of electron impact ionization in superstructure silicon carbide
    • 0255-5476
    • Sankin V I, Shkrebiy P P, Savkina N S and Lepneva A A 2004 Specificity of electron impact ionization in superstructure silicon carbide Mater. Sci. Forum 457-460 661
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 661
    • Sankin, V.I.1    Shkrebiy, P.P.2    Savkina, N.S.3    Lepneva, A.A.4
  • 30
    • 0000062671 scopus 로고    scopus 로고
    • Ballistic electron emission study of Schottky contacts on 6H- and 4H-SiC
    • 10.1063/1.120910 0003-6951
    • Im H-J, Kaczer B, Pelz J P and Choyke W J 1998 Ballistic electron emission study of Schottky contacts on 6H- and 4H-SiC Appl. Phys. Lett. 72 839
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.7 , pp. 839
    • Im, H.-J.1    Kaczer, B.2    Pelz, J.P.3    Choyke, W.J.4
  • 31
    • 0033131540 scopus 로고    scopus 로고
    • Saturated vertical drift velocity of electrons in silicon carbide polytypes
    • 10.1134/1.1187725 1063-7826
    • Sankin V I and Lepneva A A 1999 Saturated vertical drift velocity of electrons in silicon carbide polytypes Semiconductors 33 547
    • (1999) Semiconductors , vol.33 , Issue.5 , pp. 547
    • Sankin, V.I.1    Lepneva, A.A.2
  • 32
    • 17944373804 scopus 로고    scopus 로고
    • Inter-conduction band electron relaxation dynamics in 6H-SiC
    • 10.1063/1.1399304 0003-6951
    • Tomita T, Saito S, Suemoto T, Harima H and Nakashima S 2001 Inter-conduction band electron relaxation dynamics in 6H-SiC Appl. Phys. Lett. 79 1279
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.9 , pp. 1279
    • Tomita, T.1    Saito, S.2    Suemoto, T.3    Harima, H.4    Nakashima, S.5
  • 33
    • 0041194590 scopus 로고    scopus 로고
    • Electron transport under Wannier-Stark localization in silicon carbide polytypes
    • 10.1134/1.1187196 1063-7826
    • Sankin V I and Stolichnov I A 1997 Electron transport under Wannier-Stark localization in silicon carbide polytypes Semiconductors 31 489
    • (1997) Semiconductors , vol.31 , Issue.5 , pp. 489
    • Sankin, V.I.1    Stolichnov, I.A.2
  • 34
    • 33646775886 scopus 로고    scopus 로고
    • Wannier-Stark localization effects in 6H-SiC JFETs
    • 0255-5476
    • Sankin V I, Shkrebiy P P and Lebedev A A 2005 Wannier-Stark localization effects in 6H-SiC JFETs Mater. Sci. Forum 483-485 873
    • (2005) Mater. Sci. Forum , vol.483-485 , pp. 873
    • Sankin, V.I.1    Shkrebiy, P.P.2    Lebedev, A.A.3
  • 35
    • 0036661346 scopus 로고    scopus 로고
    • Wannier-Stark localization in the natural superlattice of silicon carbide polytypes. A review
    • 10.1134/1.1493739 1063-7826
    • Sankin V I 2002 Wannier-Stark localization in the natural superlattice of silicon carbide polytypes. A review Semiconductors 36 717
    • (2002) Semiconductors , vol.36 , Issue.7 , pp. 717
    • Sankin, V.I.1
  • 37
    • 0007182110 scopus 로고
    • About SiC (Sc) polytypism, grown from melt
    • Vakhner Yu and Tairov Yu M 1970 About SiC (Sc) polytypism, grown from melt Sov. Phys. Solid State 12 1213
    • (1970) Sov. Phys. Solid State , vol.12 , pp. 1213
    • Yu, V.1    Tairov Yu, M.2
  • 39
    • 0002456051 scopus 로고    scopus 로고
    • 4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds
    • 0951-3248
    • Mal'tsev A A, Maksimov A Yu and Yushin N K 1996 4H-SiC single crystal ingots grown on 6H-SiC and 15R-SiC seeds Inst. Phys. Conf. Ser. 142 42
    • (1996) Inst. Phys. Conf. Ser. , vol.142 , pp. 42
    • Mal'Tsev, A.A.1    Yu, M.A.2    Yushin, N.K.3
  • 42
    • 3743146152 scopus 로고    scopus 로고
    • Capacitance spectroscopy of deep centers in SiC
    • 0255-5476
    • Lebedev A A and Sobolev N A 1997 Capacitance spectroscopy of deep centers in SiC Mater. Sci. Forum 258-263 715
    • (1997) Mater. Sci. Forum , vol.258-263 , pp. 715
    • Lebedev, A.A.1    Sobolev, N.A.2
  • 43
    • 0000783415 scopus 로고
    • The growth of carborundum; Dislocation and polytypism
    • 0031-8086
    • Frank F C 1951 The growth of carborundum; dislocation and polytypism Phil. Mag. 42 1014
    • (1951) Phil. Mag. , vol.42 , pp. 1014
    • Frank, F.C.1
  • 45
    • 16244367825 scopus 로고
    • Allotropic transformations in ZnS
    • 0021-2148
    • Mardix S and Steinberg I T 1966 Allotropic transformations in ZnS Isr. J. Chem. 3 243
    • (1966) Isr. J. Chem. , vol.3 , pp. 243
    • Mardix, S.1    Steinberg, I.T.2
  • 46
    • 0038402418 scopus 로고    scopus 로고
    • Artificially layered heteropolytypic structures based on SiC polytypes: Molecular beam epitaxy, characterization and properties
    • 10.1016/S0370-1573(02)00632-4 0370-1573
    • Fissel A 2003 Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties Phys. Rep. 379 149
    • (2003) Phys. Rep. , vol.379 , Issue.3-4 , pp. 149
    • Fissel, A.1
  • 47
    • 0001326219 scopus 로고
    • Investigation of crystal-chemical properties of silicon carbide polytype
    • 0023-4761
    • Sorokin N D, Tairov Yu M, Tsvetkov V F and Chernov M A 1983 Investigation of crystal-chemical properties of silicon carbide polytype Kristallografiya 28 910 (in Russian)
    • (1983) Kristallografiya , vol.28 , Issue.5 , pp. 910
    • Sorokin, N.D.1    Tairov Yu, M.2    Tsvetkov, V.F.3    Chernov, M.A.4
  • 48
    • 0033164809 scopus 로고    scopus 로고
    • Influence of native defects on polytypism in SiC
    • 10.1134/1.1187764 1063-7826
    • Lebedev A A 1999 Influence of native defects on polytypism in SiC Semiconductors 33 707
    • (1999) Semiconductors , vol.33 , Issue.7 , pp. 707
    • Lebedev, A.A.1
  • 49
    • 17544371663 scopus 로고    scopus 로고
    • A vacancy model of the heteropolytype epitaxy process
    • 10.1134/1.1882785 1063-7826
    • Lebedev A A and Davydov S Yu 2005 A vacancy model of the heteropolytype epitaxy process Semiconductors 39 277
    • (2005) Semiconductors , vol.39 , Issue.3 , pp. 277
    • Lebedev, A.A.1    Yu, D.S.2
  • 50
    • 0012695510 scopus 로고    scopus 로고
    • X-ray investigation of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrate
    • 10.1016/S0921-5107(98)00498-X 0921-5107 B
    • Bauer A, Krausslich J, Kocher B, Goetz K, Fissel A and Richter W 1999 X-ray investigation of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrate Mater. Sci. Eng. B 61-62 179
    • (1999) Mater. Sci. Eng. , vol.61-62 , Issue.1-2 , pp. 179
    • Bauer, A.1    Krausslich, J.2    Kocher, B.3    Goetz, K.4    Fissel, A.5    Richter, W.6
  • 51
    • 0346976318 scopus 로고    scopus 로고
    • Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC
    • 10.1063/1.1311955 0003-6951
    • Fissel A, Schroter B, Kaiser U and Richter W 2000 Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC Appl. Phys. Lett. 77 2418
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.15 , pp. 2418
    • Fissel, A.1    Schroter, B.2    Kaiser, U.3    Richter, W.4
  • 55
    • 33847510976 scopus 로고
    • Investigation of growth processes of ingots of silicon carbide single crystals
    • 10.1016/0022-0248(78)90169-0 0022-0248
    • Tairov Yu M and Tsvetkov V F 1978 Investigation of growth processes of ingots of silicon carbide single crystals J. Cryst. Growth 43 209
    • (1978) J. Cryst. Growth , vol.43 , Issue.2 , pp. 209
    • Tairov Yu, M.1    Tsvetkov, V.F.2
  • 56
    • 84984320844 scopus 로고
    • Epitaxial growth of SiC layers by sublimation 'sandwich method': I. Growth kinetics in vacuum
    • 0023-4753
    • Vodakov Yu A, Mokhov E N, Ramm M G and Roenkov A D 1979 Epitaxial growth of SiC layers by sublimation 'sandwich method': I. Growth kinetics in vacuum Krist. Tech. 14 729
    • (1979) Krist. Tech. , vol.14 , Issue.6 , pp. 729
    • Vodakov Yu, A.1    Mokhov, E.N.2    Ramm, M.G.3    Roenkov, A.D.4
  • 57
    • 0034246736 scopus 로고    scopus 로고
    • Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
    • 10.1016/S0921-5107(00)00464-5 0921-5107 B
    • Savkina N S et al 2000 Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy Mater. Sci. Eng. B 77 50
    • (2000) Mater. Sci. Eng. , vol.77 , Issue.1 , pp. 50
    • Savkina, N.S.1    Al, E.2
  • 59
    • 0003375245 scopus 로고    scopus 로고
    • Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrate by vacuum sublimation
    • 10.1016/S0921-5107(96)01965-4 0921-5107 B
    • Andreev A N, Ttregubova A S, Scheglov M P, Syrkin A L and Chelnokov V E 1997 Influence of growth conditions on the structural perfection of β-SiC epitaxial layers fabricated on 6H-SiC substrate by vacuum sublimation Mater. Sci. Eng. B 46 141
    • (1997) Mater. Sci. Eng. , vol.46 , Issue.1-3 , pp. 141
    • Andreev, A.N.1    Ttregubova, A.S.2    Scheglov, M.P.3    Syrkin, A.L.4    Chelnokov, V.E.5
  • 64
    • 0037197471 scopus 로고    scopus 로고
    • Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation
    • 10.1016/S0921-5107(01)01053-4 0921-5107 B
    • Savkina N, Tregubova A, Scheglov M, Soloviev V, Volkova A and Lebedev A 2002 Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation Mater. Sci. Eng. B 91 317
    • (2002) Mater. Sci. Eng. , vol.91-92 , Issue.1-3 , pp. 317
    • Savkina, N.1    Tregubova, A.2    Scheglov, M.3    Soloviev, V.4    Volkova, A.5    Lebedev, A.6
  • 66
    • 0008544940 scopus 로고    scopus 로고
    • Surface polarity dependence in step-controlled epitaxy: Progress in SiC epitaxy
    • 10.1016/S0925-9635(97)00104-0 0925-9635
    • Matsunami H and Kimoto T 1997 Surface polarity dependence in step-controlled epitaxy: progress in SiC epitaxy Diam. Relat. Mater. 6 1276
    • (1997) Diam. Relat. Mater. , vol.6 , Issue.10 , pp. 1276
    • Matsunami, H.1    Kimoto, T.2
  • 67
    • 0347278105 scopus 로고    scopus 로고
    • Investigation of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
    • 0361-5235
    • Si W, Dudley M, Kong H-S, Sumakeris J and Carter C Jr 1997 Investigation of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates J. Electron. Mater. 26 151
    • (1997) J. Electron. Mater. , vol.26 , Issue.3 , pp. 151
    • Si, W.1    Dudley, M.2    Kong, H.-S.3    Sumakeris, J.4    Carter, C.5
  • 68
    • 0028418366 scopus 로고
    • Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates
    • 0884-2914
    • Chien F R, Nutt S R, Yoo W S, Kimoto T and Matsunami H 1994 Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates J. Mater. Res. 9 940
    • (1994) J. Mater. Res. , vol.9 , Issue.4 , pp. 940
    • Chien, F.R.1    Nutt, S.R.2    Yoo, W.S.3    Kimoto, T.4    Matsunami, H.5
  • 69
    • 0036538330 scopus 로고    scopus 로고
    • Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam x-ray topography
    • 10.1016/S0022-0248(02)00827-8 0022-0248
    • Dudley M, Vetter W M and Neudeck P G 2002 Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam x-ray topography J. Cryst. Growth 240 22
    • (2002) J. Cryst. Growth , vol.240 , Issue.1-2 , pp. 22
    • Dudley, M.1    Vetter, W.M.2    Neudeck, P.G.3
  • 70
    • 8744251218 scopus 로고    scopus 로고
    • Comparative growth behaviour of 3C-SiC mesa heterofilms with and without extending defects
    • 0255-5476
    • Trunek A J, Neudeck P G, Powell J A and Spry D J 2004 Comparative growth behaviour of 3C-SiC mesa heterofilms with and without extending defects Mater. Sci. Forum 457 261
    • (2004) Mater. Sci. Forum , vol.457 , pp. 261
    • Trunek, A.J.1    Neudeck, P.G.2    Powell, J.A.3    Spry, D.J.4
  • 71
    • 8744265118 scopus 로고    scopus 로고
    • High breakdown p-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas
    • 0255-5476
    • Spry D J, Trunek A J and Neudeck P G 2004 High breakdown p-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas Mater. Sci. Forum 457-460 1061
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 1061
    • Spry, D.J.1    Trunek, A.J.2    Neudeck, P.G.3
  • 72
    • 0027694437 scopus 로고
    • Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC
    • 0884-2914
    • Rowland L B, Kern R S, Tanaka S and Davis R F 1993 Gas-source molecular beam epitaxy of monocrystalline β-SiC on vicinal α(6H)-SiC J. Mater. Res. 8 2753
    • (1993) J. Mater. Res. , vol.8 , Issue.11 , pp. 2753
    • Rowland, L.B.1    Kern, R.S.2    Tanaka, S.3    Davis, R.F.4
  • 74
    • 0035852185 scopus 로고    scopus 로고
    • MBE growth and properties of SiC multi-quantum well structures
    • 10.1016/S0169-4332(01)00473-1 0169-4332
    • Fissel A, Kaiser U, Schroter B, Richter W and Bechstedt F 2001 MBE growth and properties of SiC multi-quantum well structures Appl. Surf. Sci. 184 37
    • (2001) Appl. Surf. Sci. , vol.184 , Issue.1-4 , pp. 37
    • Fissel, A.1    Kaiser, U.2    Schroter, B.3    Richter, W.4    Bechstedt, F.5
  • 75
    • 19244375903 scopus 로고    scopus 로고
    • High-quality SiC epitaxial layers and low-dimensional heteropolytypic SiC structures grown by solid-source MBE
    • 10.1016/S0022-0248(01)00888-0 0022-0248
    • Fissel A 2001 High-quality SiC epitaxial layers and low-dimensional heteropolytypic SiC structures grown by solid-source MBE J. Cryst. Growth 227-228 805
    • (2001) J. Cryst. Growth , vol.227-228 , Issue.1-4 , pp. 805
    • Fissel, A.1
  • 76
    • 0035938337 scopus 로고    scopus 로고
    • On the nature of D1-defect center in SiC: A photoluminescence study of layer grown by solid-source molecular-beam epitaxy
    • 10.1063/1.1367883 0003-6951
    • Fissel A, Richter W, Furthmuller J and Bechstedt F 2001 On the nature of D1-defect center in SiC: a photoluminescence study of layer grown by solid-source molecular-beam epitaxy Appl. Phys. Lett. 78 2512
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.17 , pp. 2512
    • Fissel, A.1    Richter, W.2    Furthmuller, J.3    Bechstedt, F.4
  • 77
    • 0019554872 scopus 로고
    • A new degradation phenomenon in blue light emitting silicon carbide diodes
    • 0018-9383
    • Zeither G and Theeis D 1981 A new degradation phenomenon in blue light emitting silicon carbide diodes IEEE Trans. Electron Devices 28 425
    • (1981) IEEE Trans. Electron Devices , vol.28 , pp. 425
    • Zeither, G.1    Theeis, D.2
  • 78
    • 4244026531 scopus 로고    scopus 로고
    • Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
    • 0255-5476
    • Bergman J P, Lendenmann H, Nilsson P A, Lindefelt U and Skytt P 2001 Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes Mater. Sci. Forum 353-356 299
    • (2001) Mater. Sci. Forum , vol.353-356 , pp. 299
    • Bergman, J.P.1    Lendenmann, H.2    Nilsson, P.A.3    Lindefelt, U.4    Skytt, P.5
  • 80
    • 0035945191 scopus 로고    scopus 로고
    • Stacking faults band structure in 4H-SiC and its impact on electron devices
    • 10.1063/1.1427749 0003-6951
    • Mao M S, Limpijumnong S and Lambrecht W R L 2001 Stacking faults band structure in 4H-SiC and its impact on electron devices Appl. Phys. Lett. 79 4360
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.26 , pp. 4360
    • Mao, M.S.1    Limpijumnong, S.2    Lambrecht, W.R.L.3
  • 82
    • 79956058236 scopus 로고    scopus 로고
    • Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on face
    • 10.1063/1.1512956 0003-6951
    • Kojima K et al 2002 Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on face Appl. Phys. Lett. 81 2974
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.16 , pp. 2974
    • Kojima, K.1    Al, E.2
  • 84
    • 30944453305 scopus 로고    scopus 로고
    • Degradation of hexagonal silicon-carbide-based bipolar devices
    • 011101
    • Skowronski M and Ha S 2006 Degradation of hexagonal silicon-carbide-based bipolar devices J. Appl. Phys. 99 011101
    • (2006) J. Appl. Phys. , vol.99
    • Skowronski, M.1    Ha, S.2
  • 87
    • 0037113113 scopus 로고    scopus 로고
    • Spontaneous formation of stacking faults in highly doped 4H-SiC during annealing
    • 10.1063/1.1516250 0021-8979
    • Kuhr T A, Liu J Q, Chung H J, Skowronski M and Szmulowicz F 2002 Spontaneous formation of stacking faults in highly doped 4H-SiC during annealing J. Appl. Phys. 92 5863
    • (2002) J. Appl. Phys. , vol.92 , Issue.10 , pp. 5863
    • Kuhr, T.A.1    Liu, J.Q.2    Chung, H.J.3    Skowronski, M.4    Szmulowicz, F.5
  • 88
    • 0036485419 scopus 로고    scopus 로고
    • Suppression of oxidation-induced stacking fault generation in argon ambient annealing with controlled oxygen and the effect upon bulk defects
    • 10.1016/S1369-8001(02)00044-6 1369-8001
    • Suzuki T 2002 Suppression of oxidation-induced stacking fault generation in argon ambient annealing with controlled oxygen and the effect upon bulk defects Mater. Sci. Semin. Proc. 5 5
    • (2002) Mater. Sci. Semin. Proc. , vol.5 , Issue.1 , pp. 5
    • Suzuki, T.1
  • 89
    • 79956016203 scopus 로고    scopus 로고
    • Structural instability of 4H-SiC polytype induced by n-doping
    • 10.1063/1.1463203 0003-6951
    • Liu J Q, Chung H J, Kuhr T, Li Q and Skowronski M 2002 Structural instability of 4H-SiC polytype induced by n-doping Appl. Phys. Lett. 80 2111
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.12 , pp. 2111
    • Liu, J.Q.1    Chung, H.J.2    Kuhr, T.3    Li, Q.4    Skowronski, M.5
  • 91
    • 8744243158 scopus 로고    scopus 로고
    • Residual stress and stacking faults in n-type 4H-SiC epilayers
    • 0255-5476
    • Okojie R S, Zhang M and Pirouz P 2004 Residual stress and stacking faults in n-type 4H-SiC epilayers Mater. Sci. Forum 457-460 529
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 529
    • Okojie, R.S.1    Zhang, M.2    Pirouz, P.3
  • 94
    • 0025233292 scopus 로고
    • Electron-irradiation-induced crystalline to amorphous transition in α-SiC single crystals
    • 0141-8637 B
    • Inui H, Mori H and Fujita H 1990 Electron-irradiation-induced crystalline to amorphous transition in α-SiC single crystals Phil. Mag. B 1 107
    • (1990) Phil. Mag. , vol.1 , pp. 107
    • Inui, H.1    Mori, H.2    Fujita, H.3
  • 100
    • 79955984696 scopus 로고    scopus 로고
    • Direct transformation of cubic diamond to hexagonal diamond
    • 10.1063/1.1495078 0003-6951
    • He H, Sekine T and Kobayshi T 2002 Direct transformation of cubic diamond to hexagonal diamond Appl. Phys. Lett. 81 510
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.4 , pp. 610
    • He, H.1    Sekine, T.2    Kobayshi, T.3
  • 101
    • 1642336692 scopus 로고    scopus 로고
    • Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition
    • 10.1063/1.1649797 0003-6951
    • Kusumori T, Muto H and Brito M 2004 Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition Appl. Phys. Lett. 84 1272
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.8 , pp. 1272
    • Kusumori, T.1    Muto, H.2    Brito, M.3
  • 103
    • 0009306768 scopus 로고    scopus 로고
    • Electronic properties of SiC polytypes and heterostructures
    • 0255-5476
    • Bechstedt F 1998 Electronic properties of SiC polytypes and heterostructures Mater. Sci. Forum 264-268 265
    • (1998) Mater. Sci. Forum , vol.264-268 , pp. 265
    • Bechstedt, F.1
  • 107
    • 0037197452 scopus 로고    scopus 로고
    • Characterization of p-n structure grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC
    • 10.1016/S0921-5107(01)01042-X 0921-5107 B
    • Strelchuk A M, Savkina N S, Kuznetsov A N, Lebedev A A and Tregubova A S 2002 Characterization of p-n structure grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC Mater. Sci. Eng. B 91-92 321
    • (2002) Mater. Sci. Eng. , vol.91-92 , Issue.1-3 , pp. 321
    • Strelchuk, A.M.1    Savkina, N.S.2    Kuznetsov, A.N.3    Lebedev, A.A.4    Tregubova, A.S.5
  • 110
    • 0033075954 scopus 로고    scopus 로고
    • Deep level centers in silicon carbide: A review
    • 10.1134/1.1187657 1063-7826
    • Lebedev A A 1999 Deep level centers in silicon carbide: a review Semiconductors 33 107
    • (1999) Semiconductors , vol.33 , Issue.2 , pp. 107
    • Lebedev, A.A.1
  • 112
    • 0031515389 scopus 로고    scopus 로고
    • 10.1002/1521-3951(199707)202:13.0.CO;2-6 0370-1972 b
    • Bozack M J 1997 Phys. Status Solidi b 202 549
    • (1997) Phys. Status Solidi , vol.202 , Issue.1 , pp. 549
    • Bozack, M.J.1
  • 114
    • 8744253552 scopus 로고    scopus 로고
    • Electroluminescence of p-3C-SiC/n-6H-SiC heterodiodes, grown by sublimation epitaxy in vacuum
    • 0255-5476
    • Lebedev A A, Strel'chuk A M, Kuznetsov A N and Savkina N S 2004 Electroluminescence of p-3C-SiC/n-6H-SiC heterodiodes, grown by sublimation epitaxy in vacuum Mater. Sci. Forum 457-460 597
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 597
    • Lebedev, A.A.1    Strel'Chuk, A.M.2    Kuznetsov, A.N.3    Savkina, N.S.4
  • 115
    • 29144459119 scopus 로고    scopus 로고
    • Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H- and 8H-SiC heterojunctions
    • 10.1134/1.2140310 1063-7826
    • Davydov S Yu, Lebedev A A and Posrednic O V 2005 Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H- and 8H-SiC heterojunctions Semiconductors 39 1391
    • (2005) Semiconductors , vol.39 , Issue.12 , pp. 1391
    • Yu, D.S.1    Lebedev, A.A.2    Posrednic, O.V.3
  • 119
    • 79956052642 scopus 로고    scopus 로고
    • Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
    • 10.1063/1.1496498 0003-6951
    • Galeckas A, Linnros J and Pirouz P 2002 Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias Appl. Phys. Lett. 81 883
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.5 , pp. 883
    • Galeckas, A.1    Linnros, J.2    Pirouz, P.3
  • 120
    • 8744233092 scopus 로고    scopus 로고
    • Spontaneous polarization of 4H SiC determined from optical emissions of 4H/3C/4H-SiC quantum wells
    • 0255-5476
    • Bai S, Devaty R P, Choyke W J, Kaiser U, Wagner G and MacMillan M F 2004 Spontaneous polarization of 4H SiC determined from optical emissions of 4H/3C/4H-SiC quantum wells Mater. Sci. Forum 457-460 573
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 573
    • Bai, S.1    Devaty, R.P.2    Choyke, W.J.3    Kaiser, U.4    Wagner, G.5    MacMillan, M.F.6
  • 121
    • 8744264974 scopus 로고    scopus 로고
    • Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates
    • 0255-5476
    • Skromme B J, Mikhov M K, Chen L, Samson G, Wang R, Li C and Bhat I 2004 Characterization of double stacking faults induced by thermal processing of heavily n-doped 4H-SiC substrates Mater. Sci. Forum 457-460 581
    • (2004) Mater. Sci. Forum , vol.457-460 , pp. 581
    • Skromme, B.J.1    Mikhov, M.K.2    Chen, L.3    Samson, G.4    Wang, R.5    Li, C.6    Bhat, I.7
  • 124
    • 0001031866 scopus 로고
    • Polarization, band lineups, and stability of SiC polytypes
    • 10.1103/PhysRevB.45.6534 0163-1829 B
    • Qteish A, Heine V and Needs R J 1992 Polarization, band lineups, and stability of SiC polytypes Phys. Rev. B 45 6534
    • (1992) Phys. Rev. , vol.45 , Issue.12 , pp. 6534
    • Qteish, A.1    Heine, V.2    Needs, R.J.3
  • 126
    • 33646764419 scopus 로고    scopus 로고
    • Estimations of the excitonic transition energies in heterostructures NH/3C/NH (N Combining double low line 2, 4, 6, 8) based on the silicon carbide polytypes
    • Davydov S Yu, Lebedev A A and Posrednic O V 2006 Estimations of the excitonic transition energies in heterostructures NH/3C/NH (N Combining double low line 2, 4, 6, 8) based on the silicon carbide polytypes Semiconductors 40 563
    • (2006) Semiconductors , vol.40 , pp. 563
    • Yu, D.S.1    Lebedev, A.A.2    Posrednic, O.V.3
  • 127
    • 33646591009 scopus 로고    scopus 로고
    • Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in 4H-SiC matrix
    • 0255-5476
    • Camasesel J and Juillaguet S 2005 Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in 4H-SiC matrix Mater. Sci. Forum 483-485 331
    • (2005) Mater. Sci. Forum , vol.483-485 , pp. 331
    • Camasesel, J.1    Juillaguet, S.2
  • 128
    • 26044478167 scopus 로고    scopus 로고
    • Specific aspects of type II heteropolytype stacking faults in SiC
    • 0255-5476
    • Juillaguet S and Camasesel J 2005 Specific aspects of type II heteropolytype stacking faults in SiC Mater. Sci. Forum 483-485 335
    • (2005) Mater. Sci. Forum , vol.483-485 , pp. 335
    • Juillaguet, S.1    Camasesel, J.2
  • 129
    • 0242335615 scopus 로고    scopus 로고
    • Self-organized growth and optical emission of silicon-based nanoscale β-SiC quantum dots
    • 10.1063/1.1609642 0021-8979
    • Wu X L, Gu Y, Xiong S J, Zhu J M, Huang G S, Bao X M and Siu G G 2003 Self-organized growth and optical emission of silicon-based nanoscale β-SiC quantum dots J. Appl. Phys. 94 5247
    • (2003) J. Appl. Phys. , vol.94 , Issue.8 , pp. 5247
    • Wu, X.L.1    Gu, Y.2    Xiong, S.J.3    Zhu, J.M.4    Huang, G.S.5    Bao, X.M.6    Siu, G.G.7
  • 130
    • 31744435632 scopus 로고    scopus 로고
    • Molecular beam epitaxy of semiconductor nanostructures based on SiC
    • 0255-5476
    • Fissel A 2005 Molecular beam epitaxy of semiconductor nanostructures based on SiC Mater. Sci. Forum 483-485 163
    • (2005) Mater. Sci. Forum , vol.483-485 , pp. 163
    • Fissel, A.1
  • 134
    • 23844537512 scopus 로고    scopus 로고
    • Formation of two-dimensional electron gases in polytypic SiC heterostructures
    • 023709
    • Polyakov V M and Schwierz F 2005 Formation of two-dimensional electron gases in polytypic SiC heterostructures J. Appl. Phys. 98 023709
    • (2005) J. Appl. Phys. , vol.98
    • Polyakov, V.M.1    Schwierz, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.