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Volumn 202, Issue 1, 1997, Pages 581-603

The physics of Ohmic contacts to SiC

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0031515390     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO;2-M     Document Type: Article
Times cited : (212)

References (71)
  • 8
    • 0006641830 scopus 로고
    • Barrier heights of 3C- and 6H-SiC schottky contacts: Explanation by the MIGS and electronegative model
    • Eds. I. OHDOMARI, M. OSHIMA, and A. HIRAKI, Elsevier Publ. Co., Amsterdam/New York
    • W. MONCH, Barrier Heights of 3C- and 6H-SiC Schottky Contacts: Explanation by the MIGS and Electronegative Model, in: Control of Semiconductor Interfaces, Eds. I. OHDOMARI, M. OSHIMA, and A. HIRAKI, Elsevier Publ. Co., Amsterdam/New York 1994 (pp. 169 to 174).
    • (1994) Control of Semiconductor Interfaces , pp. 169-174
    • Monch, W.1
  • 46
    • 0039008078 scopus 로고
    • North Carolina State University, Raleigh, NC; Cree Research, Inc., Durham (NC)
    • R. C. GLASS, J. W. PALMOUR, R. F. DAVIS, and L. M. PORTER, North Carolina State University, Raleigh, NC; Cree Research, Inc., Durham (NC) 1994.
    • (1994)
    • Glass, R.C.1    Palmour, J.W.2    Davis, R.F.3    Porter, L.M.4
  • 63
    • 85033097533 scopus 로고    scopus 로고
    • Semiconductor Crystals of Silicon Carbide with Improved Chromium-Containing Electrical Contacts, US Patent No. 3510733 (1970)
    • A. ADDAMIANO, Semiconductor Crystals of Silicon Carbide with Improved Chromium-Containing Electrical Contacts, US Patent No. 3510733 (1970).
    • Addamiano, A.1
  • 71
    • 85033081197 scopus 로고    scopus 로고
    • Method of Forming Ohmic Contacts to p-Type Wide Bandgap Semiconductors and Resulting Ohmic Contact Structure, US Patent No. 5323022 (1994)
    • R. C. GLASS, J. W. PALMOUR, R. F. DAVIS, and L. M. PORTER, Method of Forming Ohmic Contacts to p-Type Wide Bandgap Semiconductors and Resulting Ohmic Contact Structure, US Patent No. 5323022 (1994).
    • Glass, R.C.1    Palmour, J.W.2    Davis, R.F.3    Porter, L.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.