Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1221-1226

  Schmitsdorf, R F ^a   Kampen, T U ^a   Monch W ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000113985     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589442     Document Type: Article

References (22)

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