Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 789-794

  Giannazzo, F ^a   Roccaforte, F ^a   Iucolano, F ^a   Raineri, V ^a   Ruffino, F ^b,c   Grimaldi, M G ^b,c  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c MATIS CNR INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCLUSTERS; BARRIER HEIGHTS; CLUSTER SIZES; CLUSTER-SIZE DISTRIBUTIONS; CONDUCTIVE ATOMIC FORCE MICROSCOPIES; CURRENT TRANSPORTS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL BEHAVIORS; ELECTRICALLY ACTIVE DEFECTS; GAN EPILAYERS; I-V MEASUREMENTS; IDEALITY FACTORS; INHOMOGENEITIES; LOCAL BARRIER HEIGHTS; METAL NANOPARTICLES; NANO-SCALE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SELF-ASSEMBLED; SEMICONDUCTOR SYSTEMS; STANDARD DEVIATIONS; VARIABLE TEMPERATURES; WIDE-BAND GAP SEMICONDUCTORS;

CRYSTALS; ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; NANOCLUSTERS; NANOSTRUCTURED MATERIALS; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; SILICON SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64549091976     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043453     Document Type: Article

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