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Volumn 245, Issue 7, 2008, Pages 1232-1238

Silicon carbide power-device products - Status and upcoming challenges with a special attention to traditional, nonmilitary industrial applications

Author keywords

[No Author keywords available]

Indexed keywords


EID: 55449112727     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200743478     Document Type: Review
Times cited : (41)

References (27)
  • 1
    • 55449137254 scopus 로고    scopus 로고
    • R. Rupp, C. Miesner, and I. Zverev, Combination of new generation CoolMOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications, in: Proc. 2001 Power Conversion Intelligent Motion Conference (PCIM 2001), Chicago, 2001.
    • R. Rupp, C. Miesner, and I. Zverev, Combination of new generation CoolMOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications, in: Proc. 2001 Power Conversion Intelligent Motion Conference (PCIM 2001), Chicago, 2001.
  • 2
    • 34748894831 scopus 로고    scopus 로고
    • Towards a 30 kW/liter, Three-Phase Unity Power Factor Rectifier
    • presented at the, Nagoya, 2-5 April
    • S. D. Round, P. Karutz, M. L. Heldwein, and J. W. Kolar, Towards a 30 kW/liter, Three-Phase Unity Power Factor Rectifier, presented at the PCC 2007, Nagoya, 2-5 April 2007.
    • (2007) PCC
    • Round, S.D.1    Karutz, P.2    Heldwein, M.L.3    Kolar, J.W.4
  • 6
    • 55449109719 scopus 로고    scopus 로고
    • V. F. Tsvetkov, D. N. Henshall, M. F. Brdy, R. C. Glass, and C. H. Carter, Mater. Res. Soc. Symp. Proc. 512 (Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature), 89-99 (1998).
    • V. F. Tsvetkov, D. N. Henshall, M. F. Brdy, R. C. Glass, and C. H. Carter, Mater. Res. Soc. Symp. Proc. 512 (Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature), 89-99 (1998).
  • 7
    • 33749521902 scopus 로고    scopus 로고
    • F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, 2nd Generation 600V SiC Schottky Diodes Use Merged PN/Schottky Structure for Surge Overload Protection, in: Proceedings from APEC 2006, CD publication, ISBN 0-7803-9548-4.
    • F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, 2nd Generation 600V SiC Schottky Diodes Use Merged PN/Schottky Structure for Surge Overload Protection, in: Proceedings from APEC 2006, CD publication, ISBN 0-7803-9548-4.
  • 9
    • 51949102933 scopus 로고    scopus 로고
    • A new 690V AC drive with integrated sinewave output filter and SiC Schottky freewheeling diodes
    • Nürnberg VDE Verlag, Berlin, Offenbach, ISBN 3-8007-2994-6
    • B. Weis, M. Wölz, and D. Peters, A new 690V AC drive with integrated sinewave output filter and SiC Schottky freewheeling diodes, in: Proceedings of the SPS/IPC/Drives 2006, Nürnberg (VDE Verlag, Berlin, Offenbach, 2006), ISBN 3-8007-2994-6.
    • (2006) Proceedings of the SPS/IPC/Drives
    • Weis, B.1    Wölz, M.2    Peters, D.3
  • 12
    • 55449113237 scopus 로고    scopus 로고
    • See www.infineon.com/coolmos, datasheets.
    • See www.infineon.com/coolmos, datasheets.
  • 13
    • 55449085985 scopus 로고    scopus 로고
    • See www.infineon.com/coolmos, CoolMOS CP application note
    • See www.infineon.com/coolmos, CoolMOS CP application note.
  • 16
    • 55449092853 scopus 로고    scopus 로고
    • Devices for Industrial Inverters
    • presented at, October
    • D. Peters, SiC Power Devices for Industrial Inverters, presented at ICSCRM 2007, October 2007.
    • (2007) ICSCRM
    • Peters, D.1    Power, S.C.2
  • 19
    • 55449117561 scopus 로고    scopus 로고
    • Reliability of SiC power devices against cosmic radiation-induced failure
    • Newcastle-upon-Tyne, September
    • G. Soelkner, Reliability of SiC power devices against cosmic radiation-induced failure, European Conference on SiC and Related Materials (ECSCRM), Newcastle-upon-Tyne, September 2006.
    • (2006) European Conference on SiC and Related Materials (ECSCRM)
    • Soelkner, G.1
  • 23
    • 0011578222 scopus 로고    scopus 로고
    • The vertical silicon carbide JFET - a fast and low loss solid state power switching device
    • Graz, Austria, August
    • P. Friedrichs, H. Mitlehner, R. Schörner, K.-O. Dohnke, R. Elpelt, and D. Stephani, The vertical silicon carbide JFET - a fast and low loss solid state power switching device, in: Proc. of the EPE 2001, Graz, Austria, August 2001.
    • (2001) Proc. of the EPE
    • Friedrichs, P.1    Mitlehner, H.2    Schörner, R.3    Dohnke, K.-O.4    Elpelt, R.5    Stephani, D.6
  • 27
    • 48349091978 scopus 로고    scopus 로고
    • High-Voltage, High-Frequency SiC Power MOSFETs Model Validation
    • presented at, Orlando, Florida, USA, 17-21 June
    • J. M. Ortiz-Rodriguez, T. Duong, A. Rivera-Lopez, and A. R. Hefner, High-Voltage, High-Frequency SiC Power MOSFETs Model Validation, presented at PESC 2007, Orlando, Florida, USA, 17-21 June 2007.
    • (2007) PESC
    • Ortiz-Rodriguez, J.M.1    Duong, T.2    Rivera-Lopez, A.3    Hefner, A.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.