-
1
-
-
55449137254
-
-
R. Rupp, C. Miesner, and I. Zverev, Combination of new generation CoolMOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications, in: Proc. 2001 Power Conversion Intelligent Motion Conference (PCIM 2001), Chicago, 2001.
-
R. Rupp, C. Miesner, and I. Zverev, Combination of new generation CoolMOS and thinQ! Silicon Carbide Schottky diodes: new horizons in hard switching applications, in: Proc. 2001 Power Conversion Intelligent Motion Conference (PCIM 2001), Chicago, 2001.
-
-
-
-
2
-
-
34748894831
-
Towards a 30 kW/liter, Three-Phase Unity Power Factor Rectifier
-
presented at the, Nagoya, 2-5 April
-
S. D. Round, P. Karutz, M. L. Heldwein, and J. W. Kolar, Towards a 30 kW/liter, Three-Phase Unity Power Factor Rectifier, presented at the PCC 2007, Nagoya, 2-5 April 2007.
-
(2007)
PCC
-
-
Round, S.D.1
Karutz, P.2
Heldwein, M.L.3
Kolar, J.W.4
-
3
-
-
55449120194
-
Devices and their Packaging Technology
-
27-29 May, Salina, Italy, pp
-
W. Tursky, Devices and their Packaging Technology, in: Proc. IEEE 4th Workshop Future of Electronic Power Processing and Conversion, 27-29 May 2001, Salina, Italy, pp. 4-6.
-
(2001)
Proc. IEEE 4th Workshop Future of Electronic Power Processing and Conversion
, pp. 4-6
-
-
Tursky, W.1
-
5
-
-
0242579172
-
-
M. Zhang, P. Pirouz, and H. Lendenmann, Appl. Phys. Lett. 83(16), 3320-3322 (2003).
-
(2003)
Appl. Phys. Lett
, vol.83
, Issue.16
, pp. 3320-3322
-
-
Zhang, M.1
Pirouz, P.2
Lendenmann, H.3
-
6
-
-
55449109719
-
-
V. F. Tsvetkov, D. N. Henshall, M. F. Brdy, R. C. Glass, and C. H. Carter, Mater. Res. Soc. Symp. Proc. 512 (Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature), 89-99 (1998).
-
V. F. Tsvetkov, D. N. Henshall, M. F. Brdy, R. C. Glass, and C. H. Carter, Mater. Res. Soc. Symp. Proc. 512 (Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature), 89-99 (1998).
-
-
-
-
7
-
-
33749521902
-
-
F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, 2nd Generation 600V SiC Schottky Diodes Use Merged PN/Schottky Structure for Surge Overload Protection, in: Proceedings from APEC 2006, CD publication, ISBN 0-7803-9548-4.
-
F. Bjoerk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, 2nd Generation 600V SiC Schottky Diodes Use Merged PN/Schottky Structure for Surge Overload Protection, in: Proceedings from APEC 2006, CD publication, ISBN 0-7803-9548-4.
-
-
-
-
8
-
-
84965001696
-
3 by Using SiC Diodes
-
7-9 June, Naples, Italy, CD-ROM, ISBN 978-3-8007-2972-2
-
3 by Using SiC Diodes, in: Proc. 4th International Conference on Integrated Power Systems, 7-9 June 2006, Naples, Italy, CD-ROM, ISBN 978-3-8007-2972-2.
-
(2006)
Proc. 4th International Conference on Integrated Power Systems
-
-
Eckhardt, B.1
Hofmann, A.2
Maerz, M.3
-
9
-
-
51949102933
-
A new 690V AC drive with integrated sinewave output filter and SiC Schottky freewheeling diodes
-
Nürnberg VDE Verlag, Berlin, Offenbach, ISBN 3-8007-2994-6
-
B. Weis, M. Wölz, and D. Peters, A new 690V AC drive with integrated sinewave output filter and SiC Schottky freewheeling diodes, in: Proceedings of the SPS/IPC/Drives 2006, Nürnberg (VDE Verlag, Berlin, Offenbach, 2006), ISBN 3-8007-2994-6.
-
(2006)
Proceedings of the SPS/IPC/Drives
-
-
Weis, B.1
Wölz, M.2
Peters, D.3
-
10
-
-
4043056609
-
-
Sei-Hyung Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. R. Hefner, IEEE Electron Device Lett. 25(8), 556-558 (2004).
-
(2004)
IEEE Electron Device Lett
, vol.25
, Issue.8
, pp. 556-558
-
-
Ryu, S.-H.1
Krishnaswami, S.2
O'Loughlin, M.3
Richmond, J.4
Agarwal, A.5
Palmour, J.6
Hefner, A.R.7
-
11
-
-
27744459641
-
Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors
-
23-26 May, Santa Barbara, CA, USA, pp
-
A. K. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, Sei-Hyung Ryu, J. W. Palmour, S. Balachandran, T. P. Chow, S. Bayne, B. Geil, C. Scozzie, and K. A. Jones, Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors, in: Proc. 2005 Power Semiconductor Devices and ICs (ISPSD2005), 23-26 May 2005, Santa Barbara, CA, USA, pp. 271-274.
-
(2005)
Proc. 2005 Power Semiconductor Devices and ICs (ISPSD2005)
, pp. 271-274
-
-
Agarwal, A.K.1
Krishnaswami, S.2
Richmond, J.3
Capell, C.4
Ryu, S.-H.5
Palmour, J.W.6
Balachandran, S.7
Chow, T.P.8
Bayne, S.9
Geil, B.10
Scozzie, C.11
Jones, K.A.12
-
12
-
-
55449113237
-
-
See www.infineon.com/coolmos, datasheets.
-
See www.infineon.com/coolmos, datasheets.
-
-
-
-
13
-
-
55449085985
-
-
See www.infineon.com/coolmos, CoolMOS CP application note
-
See www.infineon.com/coolmos, CoolMOS CP application note.
-
-
-
-
14
-
-
26444508504
-
-
S. H. Ryu, S. Krishnaswami, M. Das, J. Richmond, A. Agarwal, J. Palmour, and J. Scofield, Mater. Sci. Forum 483-485, 797-800 (2005).
-
(2005)
Mater. Sci. Forum
, vol.483-485
, pp. 797-800
-
-
Ryu, S.H.1
Krishnaswami, S.2
Das, M.3
Richmond, J.4
Agarwal, A.5
Palmour, J.6
Scofield, J.7
-
15
-
-
0035310635
-
-
G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22(4), 176 (2001).
-
(2001)
IEEE Electron Device Lett
, vol.22
, Issue.4
, pp. 176
-
-
Chung, G.Y.1
Tin, C.C.2
Williams, J.R.3
McDonald, K.4
Chanana, R.K.5
Weller, R.A.6
Pantelides, S.T.7
Feldman, L.C.8
Holland, O.W.9
Das, M.K.10
Palmour, J.W.11
-
16
-
-
55449092853
-
Devices for Industrial Inverters
-
presented at, October
-
D. Peters, SiC Power Devices for Industrial Inverters, presented at ICSCRM 2007, October 2007.
-
(2007)
ICSCRM
-
-
Peters, D.1
Power, S.C.2
-
17
-
-
33745920183
-
High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications
-
October
-
J. M. Homberger, S. D. Mounce, R. M. Schupbach, A. B. Lostetter, and H. A. Mantooth, High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications, in: Conference Record of the Fourtieth IAS Annual Meeting, 2-6 October 2005, Vol. 1, pp. 393-398.
-
(2005)
Conference Record of the Fourtieth IAS Annual Meeting, 2-6
, vol.1
, pp. 393-398
-
-
Homberger, J.M.1
Mounce, S.D.2
Schupbach, R.M.3
Lostetter, A.B.4
Mantooth, H.A.5
-
18
-
-
55449099599
-
High Temperature Power Electronics - SiC Devices Based Applications & Issues
-
Santa Fe USA, 15-28 May
-
L. Tolbert, M. Chinthavali, B. Ozpineci, and H. Zhang, High Temperature Power Electronics - SiC Devices Based Applications & Issues, International Conference on High Temperature Electronics (Hitec 2006), Santa Fe (USA), 15-28 May 2006.
-
(2006)
International Conference on High Temperature Electronics (Hitec
-
-
Tolbert, L.1
Chinthavali, M.2
Ozpineci, B.3
Zhang, H.4
-
19
-
-
55449117561
-
Reliability of SiC power devices against cosmic radiation-induced failure
-
Newcastle-upon-Tyne, September
-
G. Soelkner, Reliability of SiC power devices against cosmic radiation-induced failure, European Conference on SiC and Related Materials (ECSCRM), Newcastle-upon-Tyne, September 2006.
-
(2006)
European Conference on SiC and Related Materials (ECSCRM)
-
-
Soelkner, G.1
-
20
-
-
0011579606
-
-
P. Friedrichs, H. Mitlehner, W. Bartsch, K. O. Dohnke, R. Kaltschmidt, U. Weinert, B. Weis, and D. Stephani, Mater. Sci. Forum 338-342, 1243-1246 (2000).
-
(2000)
Mater. Sci. Forum
, vol.338-342
, pp. 1243-1246
-
-
Friedrichs, P.1
Mitlehner, H.2
Bartsch, W.3
Dohnke, K.O.4
Kaltschmidt, R.5
Weinert, U.6
Weis, B.7
Stephani, D.8
-
21
-
-
8744249283
-
-
M. Mazzola, J. B. Casady, N. Merrett, I. Sankin, W. Draper, D. Seale, V. Bondarenko, Y. Koshka, J. Gafford, and R. Kelley, Mater. Sci. Forum 457-460, 1153-1156 (2004).
-
(2004)
Mater. Sci. Forum
, vol.457-460
, pp. 1153-1156
-
-
Mazzola, M.1
Casady, J.B.2
Merrett, N.3
Sankin, I.4
Draper, W.5
Seale, D.6
Bondarenko, V.7
Koshka, Y.8
Gafford, J.9
Kelley, R.10
-
22
-
-
33745891203
-
A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter
-
October
-
S. Round, M. Heldwein, J. Kolar, I. Hofsajer, and P. Friedrichs, A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter, Conference Record of the Industry Applications Conference, 2005, Fourtieth IAS Annual Meeting, 2-6 October 2005, Vol. 1, pp. 410-416.
-
(2005)
Conference Record of the Industry Applications Conference, 2005, Fourtieth IAS Annual Meeting, 2-6
, vol.1
, pp. 410-416
-
-
Round, S.1
Heldwein, M.2
Kolar, J.3
Hofsajer, I.4
Friedrichs, P.5
-
23
-
-
0011578222
-
The vertical silicon carbide JFET - a fast and low loss solid state power switching device
-
Graz, Austria, August
-
P. Friedrichs, H. Mitlehner, R. Schörner, K.-O. Dohnke, R. Elpelt, and D. Stephani, The vertical silicon carbide JFET - a fast and low loss solid state power switching device, in: Proc. of the EPE 2001, Graz, Austria, August 2001.
-
(2001)
Proc. of the EPE
-
-
Friedrichs, P.1
Mitlehner, H.2
Schörner, R.3
Dohnke, K.-O.4
Elpelt, R.5
Stephani, D.6
-
24
-
-
0036435359
-
-
D. Peters, P. Friedrichs, R. Schörner, and D. Stephani, Mater. Sci. Forum 389-393, 1125-1128 (2002).
-
(2002)
Mater. Sci. Forum
, vol.389-393
, pp. 1125-1128
-
-
Peters, D.1
Friedrichs, P.2
Schörner, R.3
Stephani, D.4
-
26
-
-
38449105172
-
-
J. J. Sumakeris, B. A. Hull, M. J. O'Loughlin, M. Skowronski, and V. Balakrishna, Mater. Sci. Forum 556-557, 77-80 (2007).
-
(2007)
Mater. Sci. Forum
, vol.556-557
, pp. 77-80
-
-
Sumakeris, J.J.1
Hull, B.A.2
O'Loughlin, M.J.3
Skowronski, M.4
Balakrishna, V.5
-
27
-
-
48349091978
-
High-Voltage, High-Frequency SiC Power MOSFETs Model Validation
-
presented at, Orlando, Florida, USA, 17-21 June
-
J. M. Ortiz-Rodriguez, T. Duong, A. Rivera-Lopez, and A. R. Hefner, High-Voltage, High-Frequency SiC Power MOSFETs Model Validation, presented at PESC 2007, Orlando, Florida, USA, 17-21 June 2007.
-
(2007)
PESC
-
-
Ortiz-Rodriguez, J.M.1
Duong, T.2
Rivera-Lopez, A.3
Hefner, A.R.4
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