On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H-Silicon carbide

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2161-2163

  Vathulya, Vickram R ^a   Ning Wang, Dong ^a   White, Marvin H ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001203064     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122562     Document Type: Article

References (9)

1. A. K. Agarwal, G. Augustine, V. Balakrishna, C. D. Brandt, A. A. Burk, L. Chen, R. C. Clarke, P. M. Esker, H. M. Hobgood, and R. H. Hopkins, Tech. Dig. Int. Electron Devices Meet. 225, 1996.
2. M. I. Chaudhry, J. Appl. Phys. 69, 7319 (1991).
3. D. Alok, P. K. McLarty, and B. J. Baliga, Appl. Phys. Lett. 65, 2177 (1994).
4. J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, J. Electron. Mater. 24, 303 (1995).
5. P. Friedrichs, E. P. Burte, and R. Schorner, Appl. Phys. Lett. 65, 1665 (1994).
6. V. R. Vathulya, W. E. Wagner, F. C. Miller, and M. H. White, Microelectron. Eng. 36, 175 (1997).
7. C. S. Fadley, J. Electron Spectroscopy 4, 93 (1974).
8. V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J. Schulz, and C. I. Harris, Appl. Phys. Lett. 68, 2141 (1996).
9. L. M. Terman, Solid-State Electron. 5, 285 (1962).