Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 127-130

  Condorelli, G ^b   Mauceri, M ^b   Pistone, G ^b   Perdicaro, L M S ^b   Abbondanza, G ^b   Portuese, F ^b   Valente, G L ^c   Crippa, D ^c   Giannazzo, F ^a   La Via, F ^a  

^a CNR IMM   (Italy)

^b Epitaxial Technology Center   (Italy)

^c LPE   (Italy)

Author keywords

Epitaxial growth; High growth rate; Silicon carbide; Trichlorosilane

Indexed keywords

ETHYLENE; SILICON CARBIDE;

AS DOPING; DOPED STRUCTURES; HIGH GROWTH RATE; LOW BACKGROUND; SILICON PRECURSORS; TRICHLOROSILANES; TRIMETHYLALUMINUM;

EPITAXIAL GROWTH;

EID: 61449121429     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Leone, M. Mauceri, G. Pistone, G. Abbondanza, F. Portuese, G. Abagnale, G.L. Valente, D. Crippa, M. Barbera, R. Reitano, G. Foti, F. La Via, Mater. Sci. Forum Vol. (2006), p. 179
2. F. Giannazzo, P. Musumeci, L. Calcagno, A. Makhtari and V. Raineri, Mater. Sci. Semicond. Process. Vol. 4, (2001), p. 195.
3. F. Giannazzo, L. Calcagno, V. Raineri, L. Ciampolini, M. Ciappa, E. Napolitani, Appl. Phys. Lett. Vol. 79, (2001), p. 1211.