Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2708-2715

  Matsuura, Hideharu ^a   Komeda, Masahiko ^a   Kagamihara, Sou ^a   Iwata, Hirofumi ^a   Ishihara, Ryohei ^a   Hatakeyama, Tetsuo ^b   Watanabe, Takatoshi ^b   Kojima, Kazutoshi ^b   Shinohe, Takashi ^b   Arai, Kazuo ^c  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; APPROXIMATION THEORY; COMPUTER SIMULATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; FERMI LEVEL; HALL EFFECT; HOLE MOBILITY; IMPURITIES; IONIZATION; PARAMETER ESTIMATION; SEMICONDUCTOR MATERIALS;

ACCEPTOR LEVELS; BAND GAP SEMICONDUCTORS; EPILAYERS; FERMI-DIRAC DISTRIBUTION;

SILICON CARBIDE;

EID: 5044222534     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775298     Document Type: Article

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