Low-dose aluminum and boron implants in 4H and 6H silicon carbide

Journal of Applied Physics

Volumn 90, Issue 6, 2001, Pages 2796-2805

  Saks, N S ^a   Agarwal, A K ^b   Ryu, S H ^b   Palmour, J W ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035884006     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1392958     Document Type: Article

References (32)

1. G. Pensl and T. Troffer, Solid State Phenom. 47-48, 155 (1996).
2. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
3. J. B. Casady and R. W. Johnson, Solid-State Electron. 39, 1409 (1996).
4. N. Inoue, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, in Proceedings of the Silicon Carbide and Related Materials Conference, Kyoto, Japan, 1995, Inst. Phys. Conf. Ser. No. 142 (IOP, Japan, 1996), Chap. 3, p. 525.
5. M. A. Capano, S. Ryu, J. A. Cooper, M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, and D. E. Walker, J. Electron. Mater. 28, 214 (1999).
6. E. M. Handy, M. V. Rao, K. A. Jones, M. S. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou, and J. Mittereder, J. Appl. Phys. 86, 746 (1999).
7. K. A. Jones, K. Xie, D. W. Eckart, M. C. Wood, V. Talyansky, R. D. Vispute, T. Venkatensan, K. Wongchotigul, and M. Spencer, J. Appl. Phys. 83, 8010 (1998).
8. M. V. Rao, J. B. Tucker, M. C. Ridgway, O. W. Holland, N. Papanicolaou, and J. Mittereder, J. Appl. Phys. 86, 752 (1999).
9. N. S. Saks, A. K. Agarwal, S. S. Mani, and V. S. Hegde, Appl. Phys. Lett. 76, 1896 (2000).
10. J. P. Donnelly, W. T. Lindley, and C. E. Hurwitz, Appl. Phys. Lett. 27, 41 (1975).
11. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, Phys. Status Solidi A 162, 277 (1997).
12. L. T. Kroko and A. G. Milnes, Solid-State Electron. 9, 1129 (1966).
13. G. Pensl, V. V. Anfanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H. P. Strunk, M. Marier, and W. J. Choyke, Inst. Phys. Ser. No. 142 (IOP, Japan, 1996), Chap. 2, p. 275.
14. A. Schöner, N. Nordell, K. Rottner, R. Helbig, and G. Pensl. Inst. Phys. Conf. Ser. No. 142 (IOP, Japan, 1996), p. 493.
15. J. M. Bluet, J. Pernot, J. Camassel, S. Contreras, J. L. Robert, J. F. Michaud, and T. Billion, J. Appl. Phys. 88, 1971 (2000).
16. J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch. IEEE Electron Device Lett. 18, 93 (1997).
17. R. Schörner, P. Friedrichs, D. Peters, H. Mitlehner, B. Weis, and D. Stephani, Mater. Sci. Forum 338-342, 1295 (2000).
18. B. J. Baliga, Power Semiconductor Devices (PWS Publishing, Boston, MA, 1996), Chap. 3, pp. 111-112.
19. S. E. Saddow, J. Williams, T. Isaacs-Smith, M. A. Capano, J. A. Cooper, M. S. Mazzola, A. J. Hsieh, and J. B. Casady, Mater. Sci. Forum 338-342, 901 (2000).
20. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990), Chap. 2, pp. 42-45, Eq. 2.1 to 2.7.
21. G. Rutsch, R. P. Devaty, W. J. Choyke, D. W. Langer, and L. B. Rowland, J. Appl. Phys. 84, 2062 (1998).
22. SIMS analysis was performed by Evans East, East Windsor, NJ 08520.
23. S. Ahmed, C. J. Barbero, T. W. Sigmon, and J. W. Erickson, J. Appl. Phys. 77, 6194 (1995).
24. A. V. Suvorov, L. A. Lipkin, G. M. Johnson, R. Singh, and J. W. Palmour, Mater. Sci. Forum 338-342, 1275 (2000).
25. Y. Tanaka, N. Kobayashi, H. Okumura, R. Suzuki, T. Ohdaira, M. Hasegawa, M. Ogura, S. Yoshida, and H. Tanoue, Mater. Sci. Forum 338-342, 909 (2000).
26. E. Morvan, P. Godignon, M. Vellvehi, A. Hallen, M. Linnarsson, and A. Yu. Kuznetsov, Appl. Phys. Lett. 74, 3990 (1999).
27. SRIM2000.39, J. F. Ziegler and J. P. Biersack, "Stopping and range of ions in matter" software, copyright IBM 1998, 1999.
28. A. Hallén, P. O. A. Persson, A. Yu. Kuznetsov, L. Hultman, and B. G. Svensson, Mater. Sci. Forum 338-342, 869 (2000).
29. T. Ohono and N. Kobayashi, Mater. Sci. Forum 338-342, 913 (2000).
30. W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, Proceedings of the Materials Research Society Symposium, April 4-8, 1994, San Francisco, CA, 1994, Vol. 339, p. 595.
31. W. J. Schaffer, H. S. Kong, G. H. Negley, and J. W. Palmour, Inst. Phys. Conf. Ser. No. 137 (IOP, Japan, 1994), Chap. 3, p. 155.
32. D. L. Barrett and R. B. Campbell, J. Appl. Phys. 38, 53 (1967).