Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 376-383

  Skromme, B J ^a,b   Luckowski, E ^a   Moore, K ^a   Bhatnagar, M ^a   Weitzel, C E ^a   Gehoski, T ^a   Ganser, D ^a  

^a MOTOROLA INC   (United States)

^b AZ 85281   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; METALLIZING; SCHOTTKY BARRIER DIODES;

BARRIER HEIGHT NONUNIFORMITY; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRON BEAM INDUCED CURRENT (EBIC);

SILICON CARBIDE;

EID: 0033876688     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0081-9     Document Type: Article

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