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Volumn 49, Issue 5, 2002, Pages 947-949
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4H-SiC rectifiers with dual metal planar Schottky contacts
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Author keywords
Barrier height; Dual metal contact; Nickel; On off current ratio; Planar; Schottky diode; Titanium
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Indexed keywords
CURRENT DENSITY;
ELECTRIC CONTACTS;
ELECTRIC POTENTIAL;
LEAKAGE CURRENTS;
NICKEL;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
SILICON CARBIDE;
TITANIUM;
BARRIER HEIGHT;
DUAL METAL PLANAR;
EPITAXIAL WAFERS;
SCHOTTKY CONTACTS;
SOLID STATE RECTIFIERS;
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EID: 0036564419
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.998610 Document Type: Article |
Times cited : (26)
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References (6)
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