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Volumn 49, Issue 5, 2002, Pages 947-949

4H-SiC rectifiers with dual metal planar Schottky contacts

Author keywords

Barrier height; Dual metal contact; Nickel; On off current ratio; Planar; Schottky diode; Titanium

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NICKEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; TITANIUM;

EID: 0036564419     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998610     Document Type: Article
Times cited : (26)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.