Silicon carbide crystal and substrate technology: A survey of recent advances

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 3-8

  Hobgood, H McD ^a   Brady, M F ^a   Calus, M R ^a   Jenny, J R ^a   Leonard, R T ^a   Malta, D P ^a   Müller, St G ^a   Powell, A R ^a   Tsvetkov, V F ^a   Glass, R C ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Crystal; Defects; Diameter; Dislocations; Micropipe; Purity; PVT; Resistivity; Seeded sublimation; Semi insulating; Silicon carbide; Stress; Substrate; Wafer

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; LIGHT EMITTING DIODES; MESFET DEVICES; RESEARCH AND DEVELOPMENT MANAGEMENT; SILICON WAFERS; SPUTTERING; STRESS ANALYSIS; SUBLIMATION;

MICROPIPES; PURITY; RESISTIVITY; SEEDED SUBLIMATION; SEMI-INSULATING;

SILICON CARBIDE;

EID: 8744257754     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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