Effect of graphite cap for implant activation on inversion channel mobility in 4H-SiC MOSFETs

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 773-776

  Naik, H ^a   Tang, K ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC mosfets; Graphite cap; Inversion layer mobility

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL ACTIVATION; GRAPHITE; HALL MOBILITY; MOSFET DEVICES; TEMPERATURE; THRESHOLD VOLTAGE;

4H-SIC MOSFETS; DEVICE PARAMETERS; FIELD-EFFECT MOBILITIES; GATE OXIDE PROCESS; GRAPHITE CAPPING LAYER; INVERSION CHANNELS; SHEET CARRIER CONCENTRATION; SUBTHRESHOLD SLOPE;

SILICON CARBIDE;

EID: 77952815380     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.773     Document Type: Conference Paper

References (7)

1. K. V. Vassilevski et al.: Semicond. Sci. Technol. Vol. 20 (2005), p. 271 doi:10.1088/0268-1242/20/3/003. (Pubitemid 40347134)
2. M. K. Balasubramanian et al.: Late News Paper, EMC, Santa Barbara, CA, June 22-24, (2005).
3. T. A. Khan, M. B. Koushnik, and T.P. Chow: Eastman Conference, Ithaca, NY, August, (2006).
4. Y. Wang, K. Tang, T. Khan et al.: IEEE Trans. Electron Dev. Vol. 55 (2008), p. 2046 doi:10.1109/TED.2008.926674.
5. S. T. Sheppard, J. A. Cooper, and M. A. Melloch: J. Appl. Phys. Vol. 75 (1994), p. 3205 doi:10.1063/1.357017.
6. G. Ghibaudo: Electron. Lett. Vol. 24 (1988), p. 543 doi:10.1049/el: 19880369.
7. A. G. Sabnis and J. T. Clemens: IEDM Tech. Dig (1979), p. 18.