Formation of two-dimensional electron gases in polytypic SiC heterostructures

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Polyakov, V M ^a   Schwierz, F ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYER THICKNESS; BOUND CHARGE; ELECTRON SHEET CONCENTRATION; POLYTYPIC SIC HETEROSTRUCTURES;

BINDING ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON DEVICES; ELECTRON MOBILITY; HETEROJUNCTIONS; PIEZOELECTRIC DEVICES; POISSON EQUATION; POLARIZATION; SILICA; TRANSISTORS;

ELECTRON GAS;

EID: 23844537512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1984070     Document Type: Article

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