A vapor-liquid-solid mechanism for growing 3C-SiC single-domain layers on 6H-SiC(0001)

Advanced Functional Materials

Volumn 16, Issue 7, 2006, Pages 975-979

  Soueidan, Maher ^a,b   Ferro, Gabriel ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b NATIONAL COUNCIL FOR SCIENTIFIC RESEARCH   (Lebanon)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL ORIENTATION; DEFECTS; NUCLEATION; PROPANE; SILICON;

3C-SIC MONOCRYSTALLINE MATERIAL; PROPANE FLUX; VAPOR-LIQUID-SOLID MECHANISM;

SILICON CARBIDE;

EID: 33646536098     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200500597     Document Type: Article

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