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Physica Status Solidi (B) Basic Research

Volumn 245, Issue 7, 2008, Pages 1378-1389

Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

(12) Pensl, Gerhard a Beljakowa, Svetlana a Frank, Thomas a Gao, Kunyuan a Speck, Florian a Seyller, Thomas a Ley, Lothar a Ciobanu, Florin a Afanas'ev, Valery b Stesmans, Andre b Kimoto, Tsunenobu c Schöner, Adolf d

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b UNIVERSITY OF LEUVEN (Belgium)

c KYOTO UNIVERSITY (Japan)

d ACREO AB (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55449128008 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.200844011 Document Type: Review

Times cited : (78)

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