Temperature dependence of the c-axis mobility in 6H-SiC Schottky diodes

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4181-4183

  Roccaforte, F ^a   La Via, F ^a   Raineri, V ^a   Mangano, F ^b   Calcagno, L ^b  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON MOBILITY; LITHOGRAPHY; MICROSCOPIC EXAMINATION; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS;

DOPANT CONCENTRATION; EPITAXIAL LAYER; SERIES RESISTANCE MEASUREMENT; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 0346150162     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628390     Document Type: Article

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