Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

Semiconductor Science and Technology

Volumn 15, Issue 12, 2000, Pages 1107-1114

  Morrison, D J ^a   Pidduck, A J ^b   Moore, V ^b   Wilding, P J ^b   Hilton, K P ^b   Uren, M J ^b   Johnson, C M ^a   Wright, N G ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLIZING; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; THERMOOXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH DAMAGES;

SILICON CARBIDE;

EID: 0034503966     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/12/302     Document Type: Article

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