Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Applied Physics Letters

Volumn 70, Issue 15, 1997, Pages 2028-2030

  Li, Hui Feng ^a   Dimitrijev, Sima ^a   Harrison, H Barry ^a   Sweatman, Denis ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001441489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118773     Document Type: Article

References (22)

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