Ideal SiC Schottky barrier diodes fabricated using refractory metal borides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1865-1869

  Oder, T N ^a   Sutphin, E ^a   Kummari, R ^a  

^a YOUNGSTOWN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; DEPOSITION TEMPERATURES; ELECTRICAL PROPERTY; HIGH TEMPERATURE DEVICE; HIGH-POWER; IDEALITY FACTORS; REVERSE BIAS; SCHOTTKY CONTACTS; SIC SCHOTTKY DIODE; SIC SUBSTRATES; THERMAL STABILITY;

BORIDES; DIODES; ELECTRIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; OXYGEN; REFRACTORY MATERIALS; REFRACTORY METALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

SCHOTTKY BARRIER DIODES;

EID: 68349139914     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3151831     Document Type: Article

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