Activation of aluminum implanted at high doses in 4H-SiC

Journal of Applied Physics

Volumn 88, Issue 4, 2000, Pages 1971-1977

  Bluet, J M ^a,c   Pernot, J ^b   Camassel, J ^b   Contreras, S ^b   Robert, J L ^b   Michaud, J F ^a   Billon, T ^a  

^a CEA LETI   (France)

^b CNRS   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000938713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1305904     Document Type: Article

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