Silicon carbide: Defects and devices

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 663-670

  Roccaforte, F ^a   Di Franco, S ^a   Giannazzo, F ^a   La Via, F ^a   Libertino, S ^a   Raineri, V ^a   Saggio, M ^b   Zanetti, E ^b  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Breakdown; Ion irradiation; Schottky diodes; Silicon carbide

Indexed keywords

ENGINEERING RESEARCH; ION BOMBARDMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

BREAKDOWN; ELECTRONIC DEVICE; INDUCED DEFECTS; INTERNATIONAL RESEARCHES; IRRADIATION-INDUCED DEFECTS; MATERIAL DEFECT; SCHOTTKY CONTACTS; SCHOTTKY DIODES;

DEFECTS;

EID: 36148952171     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.663     Document Type: Conference Paper

References (29)

1. Yoon Soon Park, SiC Materials and Devices, Semiconductors and Semimetal vol. 52, eds. R.K. Willardson and E.R. Weber, Academic Press, San Diego CA, 1998
2. C.E. Weitzel, J.W. Palmour, C.H. Carter, K. Moore, K.J. Nordquist, S. Allen, C. Thero, IEEE Trans. on Electron Devices Vol. 43 (1996), p. 1732.
3. F. Roccaforte, F. La Via, S. Di Franco, V. Raineri, Appl. Phys. Lett. Vol. 81 (2002), p. 1125.
4. M. Dudley, X. R. Huang, W. Huang, A. Powell, S. Wang, P. Neudeck, M. Skowronski, Appl. Phys. Lett. Vol. 75 (1999), p. 784.
5. P. Neudeck, J.A. Powell, IEEE Electron Device Lett. Vol. 15 (1994), p. 63.
6. H. McD. Hobgood et al., Mat. Sci. Forum Vol. 457-460 (2004), p. 3.
7. D. T. Morrisette, J. A. Cooper, Mat. Sci. Forum Vol. 389-393 (2002), p. 1181.
8. St. G. Müller et al., European Physics Journal Vol. 27 (2004), p. 29.
9. Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, B. J. Skromme, B. Raghothamachar, M. Dudley, J. Appl. Phys. Vol. 97 (2005), 013540.
10. Q. Wahab, A. Ellison, A. Henry, E. Janzén, C. Hallin, J. Di persio, R. Martinez, Appl. Phys. Lett. Vol. 76 (2000), p. 2725.
11. P.G. Neudeck, W. Huang, Dudley D, IEEE Trans. Electron Devices Vol. 46, 478 (1999).
12. P.G. Neudeck, C. Fazi, IEEE Electron Device Lett. Vol. 18, (1997), p. 96.
13. R. Raghanathan, B.J. Baliga, Appl. Phys. Lett. 72 (1998), p. 3196.
14. F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, G.G. Condorelli, Appl. Phys. A Vol. 77 (2003), p. 827.
15. K.J. Choi, S.Y. Han, J.L. Lee, J. Appl. Phys. Vol. 94 (2003), p.1765.
16. F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, Appl. Surf. Sci. Vol. 184 (2001), p. 295.
17. F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, E. Zanoni, J. Appl. Phys. Vol. 93 (2003), p. 9137.
18. R.T. Tung, Phys. Rev. B Vol. 45 (1992), p. 13509.
19. F. Roccaforte, F. La Via, A. Baeri, V. Raineri, L. Calcagno, F. Mangano, J. Appl. Phys. Vol. 96 (2004), p. 4313.
20. R. Pierobon, G. Meneghesso, E. Zanoni, F. Roccaforte, F. La Via, V. Raineri, Mat. Sci. Forum Vol. 483-485 (2005), p. 933.
21. K. Wongchotigul, “Ion implantation and anneal characteristics of SiC”, in Properties of Silicon Carbide, Ed. G.L. Harris (INSPEC, IEE, London 1995), pp. 157-161.
22. K.J. Schoen, J.M. Woodall, J.A. Cooper, M.R. Melloch, IEEE Trans. on Electron Devices, Vol. 45 (1998), p. 1595.
23. Y.P. Pai, H.C. Lin, Solid-State Electron. Vol. 24 (1981), p. 929.
24. J.R. Waldrop, R.W. Grant, Appl. Phys. Lett. Vol. 62 (1993), p. 2685.
25. D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, F. Meyer, IEEE Trans. Electron Devices Vol. 46 (1999), p. 449.
26. F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno, Microelectronic Engineering Vol. 60 (2002), p. 269.
27. F. Roccaforte, C. Bongiorno, F. La Via, V. Raineri, Appl. Phys. Lett. Vol. 85 (2004), p.6152.
28. I. Pintilie, L. Pintilie, K. Irmscher, B. Thomas, Appl. Phys. Lett. Vol. 81 (2002), p. 4841.
29. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schöner, N. Nordell, phys. stat. sol. (a) Vol. 162 (1997), p. 199.