High energy proton irradiation effects on SiC Schottky rectifiers

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2385-2387

  Nigam, S ^a   Kim, Jihyun ^a   Ren, F ^a   Chung, G Y ^b   MacMillan, M F ^b   Dwivedi, R ^c   Fogarty, T N ^c   Wilkins, R ^c   Allums, K K ^a   Abernathy, C R ^a   Pearton, S J ^a   Williams, J R ^d  

^a University of Florida   (United States)

^b Sterling Semiconductor   (United States)

^c PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^d AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CENTERS; EDGE TERMINATION; FLUENCES; FORWARD CURRENTS; HIGH ENERGY PROTON; IDEALITY FACTORS; IRRADIATION EFFECT; ON-STATE RESISTANCE; PROTON DOSE; REVERSE BREAKDOWN VOLTAGE; REVERSE LEAKAGE CURRENT; SCHOTTKY RECTIFIERS; UNIRRADIATED DEVICES;

PROTON IRRADIATION; PROTONS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956037847     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509468     Document Type: Article

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