Electrical transport properties of aluminum-implanted 4H-SiC

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Pernot, J ^a,b   Contreras, S ^a   Camassel, J ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION POTENTIAL; ELECTRICAL TRANSPORT PROPERTIES; FREE HOLE DENSITY; INTERVALLEY SCATTERING;

ALUMINUM COMPOUNDS; DENSITY (OPTICAL); DOPING (ADDITIVES); EPITAXIAL GROWTH; ION IMPLANTATION; IONIZATION; LATTICE CONSTANTS; PHONONS; SCATTERING; TRANSPORT PROPERTIES;

SILANES;

EID: 23844534268     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1978987     Document Type: Article

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