Effects of heating ramp rates on the characteristics of Al implanted 4H-SiC junctions

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Poggi, A ^a   Bergamini, F ^a   Nipoti, R ^a   Solmi, S ^a   Canino, M ^b   Carnera, A ^c  

^a CNR   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ARGON; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; SILICON CARBIDE;

HEATING RAMP; HEATING RATE; POSTIMPLANTATION;

SEMICONDUCTOR JUNCTIONS;

EID: 33646260202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2196233     Document Type: Article

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