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Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 241-248

Electronic properties of SiO2/SiC interfaces

(1) Afanas'ev, V V a

a KU LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; DEGRADATION; ENERGY GAP; FAILURE ANALYSIS; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; SILICA; SILICON CARBIDE; STRESS ANALYSIS; TRANSPORT PROPERTIES;

NATURAL INSULATING OXIDES; NEAR-INTERFACIAL OXIDE DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033190245 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00379-2 Document Type: Article

Times cited : (40)

References (54)

1
- 0028447880
- M. Ruff, H Mitlehner, and R. Heibig, IEEE Trans. Elecron Dev., 41 (1994) 1040.
- (1994) IEEE Trans. Elecron Dev. , vol.41 , pp. 1040
- Ruff, M.¹ Mitlehner, H.² Heibig, R.³

2
- 21544461610
- H Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys., 76 (1994) 1363.
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Strite, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

3
- 0003405620
- R. Freer (ed.), Kluwer, Dordrecht
- W. J. Choyke, In: The Physics and Chemistry of Carbides, Nitrides and Borides, R. Freer (ed.), Kluwer, Dordrecht, 1990, p. 653.
- (1990) The Physics and Chemistry of Carbides, Nitrides and Borides , pp. 653
- Choyke, W.J.¹

4
- 0031189326
- J. A. Cooper, Jr., Phys. Stat. Sol. (a), 162 (1997) 305.
- (1997) Phys. Stat. Sol. (A) , vol.162 , pp. 305
- Cooper J.A., Jr.¹

5
- 0031100073
- M. R. Melloch and J. A. Cooper, Jr., MRS Bull., 22 (1997) 42.
- (1997) MRS Bull. , vol.22 , pp. 42
- Melloch, M.R.¹ Cooper J.A., Jr.²

6
- 0033099620
- M. Mathur Maranowski and J. A. Cooper, Jr., IEEE Trans. Electron Dev., 46 (1999) 520.
- (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 520
- Maranowski, M.M.¹ Cooper J.A., Jr.²

7
- 0031648334
- C.-M. Zetterling, M. Östling, C. I. Harris, N. Nordell, K. Wongchoutigul, and M. G. Spencer, Mater. Sci. Forum, 264-268 (1998) 877.
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 877
- Zetterling, C.-M.¹ Östling, M.² Harris, C.I.³ Nordell, N.⁴ Wongchoutigul, K.⁵ Spencer, M.G.⁶

8
- 0033096736
- L. A. Lipkin and J. W. Palmour, IEEE Trans. Electron Dev., 46 (1999) 525.
- (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 525
- Lipkin, L.A.¹ Palmour, J.W.²

9
- 0346398961
- V. V. Afanas'ev, M. Bassler, G. Pensl, M. J. Schulz, E. Stein von Kamienski, J. Appl. Phys., 79 (1996) 3108.
- (1996) J. Appl. Phys. , vol.79 , pp. 3108
- Afanas'ev, V.V.¹ Bassler, M.² Pensl, G.³ Schulz, M.J.⁴ Von Kamienski, E.S.⁵

10
- 0000450066
- T. H. DiStefano and D. E. Eastman, Solid State Commun., 9 (1971) 2259.
- (1971) Solid State Commun. , vol.9 , pp. 2259
- DiStefano, T.H.¹ Eastman, D.E.²

11
- 0008574844
- V. K. Adamchuk and V. V. Afanas'ev, Sov. Phys.: Solid State, 26 (1984) 1519.
- (1984) Sov. Phys.: Solid State , vol.26 , pp. 1519
- Adamchuk, V.K.¹ Afanas'ev, V.V.²

12
- 0002846412
- E. Bano, T. Ouisse, P. Lassagne, T. Billon, C. Jaussand, Inst. Phys. Conf. Ser. No 142 (1996) 733.
- (1996) Inst. Phys. Conf. Ser. No 142 , vol.142 , pp. 733
- Bano, E.¹ Ouisse, T.² Lassagne, P.³ Billon, T.⁴ Jaussand, C.⁵

13
- 0031333557
- A. K. Agarwal, S. Seshardi, and L. B. Rowland, IEEE Electron Dev. Lett., 18 (1997) 592.
- (1997) IEEE Electron Dev. Lett. , vol.18 , pp. 592
- Agarwal, A.K.¹ Seshardi, S.² Rowland, L.B.³

14
- 36449004431
- D. Alok, P. K. McLarty, and J. Baliga, Appl. Phys. Lett., 64 (1994) 2845.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 2845
- Alok, D.¹ McLarty, P.K.² Baliga, J.³

15
- 36449002718
- P. Friedrichs, E. P. Burte, and R. Schörner, Appl. Phys. Lett., 65 (1994) 1665.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1665
- Friedrichs, P.¹ Burte, E.P.² Schörner, R.³

16
- 0000102171
- V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J Schulz, and C. I. Harris, Appl. Phys. Lett., 68 (1996) 2141.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2141
- Afanas'ev, V.V.¹ Stesmans, A.² Bassler, M.³ Pensl, G.⁴ Schulz, M.J.⁵ Harris, C.I.⁶

17
- 0031150246
- C. I. Harris and V. V. Afanas'ev, Microelectronic Eng., 36 (1997) 167.
- (1997) Microelectronic Eng. , vol.36 , pp. 167
- Harris, C.I.¹ Afanas'ev, V.V.²

18
- 0031188454
- V. V. Afanas'ev, M. Bassler, G. Pensl, and M. J. Schulz, Phys. Stat. Sol. (a), 162 (1997) 321.
- (1997) Phys. Stat. Sol. (A) , vol.162 , pp. 321
- Afanas'ev, V.V.¹ Bassler, M.² Pensl, G.³ Schulz, M.J.⁴

19
- 0008603557
- C.-M. Zetterling and M. Östling, Phys. Scripta, T54 (1994) 291.
- (1994) Phys. Scripta , vol.T54 , pp. 291
- Zetterling, C.-M.¹ Östling, M.²

20
- 0000004718
- J. N. Shenoy, M. K. Das, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, J. Appl. Phys., 79 (1996) 3042.
- (1996) J. Appl. Phys. , vol.79 , pp. 3042
- Shenoy, J.N.¹ Das, M.K.² Cooper J.A., Jr.³ Melloch, M.R.⁴ Palmour, J.W.⁵

21
- 0028532131
- D. Alok, B. J. Baliga, and P. K. McLarty, IEEE Electron Dev. Lett., 15 (1994) 424.
- (1994) IEEE Electron Dev. Lett. , vol.15 , pp. 424
- Alok, D.¹ Baliga, B.J.² McLarty, P.K.³

22
- 0000853312
- V. V. Afanas'ev and A. Stesmans, Phys. Rev. Lett., 78 (1997) 2437.
- (1997) Phys. Rev. Lett. , vol.78 , pp. 2437
- Afanas'ev, V.V.¹ Stesmans, A.²

23
- 0032049925
- J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, IEEE Electron Dev. Lett., 19 (1998) 100.
- (1998) IEEE Electron Dev. Lett. , vol.19 , pp. 100
- Spitz, J.¹ Melloch, M.R.² Cooper J.A., Jr.³ Capano, M.A.⁴

24
- 0031648147
- T. Kinoshita, K. M. Itoh, J. Muto, M. Schadt, G. Pensl, K. Takeda, Mater.Sci.Forum, 264-268 (1998) 295.
- (1998) Mater.Sci.Forum , vol.264-268 , pp. 295
- Kinoshita, T.¹ Itoh, K.M.² Muto, J.³ Schadt, M.⁴ Pensl, G.⁵ Takeda, K.⁶

25
- 0031189894
- T. Ouisse, Phys. Stat. Sol. (a), 162 (1997) 339.
- (1997) Phys. Stat. Sol. (A) , vol.162 , pp. 339
- Ouisse, T.¹

26
- 0026108747
- M. Shinohara, M. Yamanaka, S. Misawa, H. Okumura, S. Yoshida, Jpn. J. Appl. Phys., 30 (1991) 240.
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 240
- Shinohara, M.¹ Yamanaka, M.² Misawa, S.³ Okumura, H.⁴ Yoshida, S.⁵

27
- 51249162328
- J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, J. Electron. Mater., 24 (1995) 303.
- (1995) J. Electron. Mater. , vol.24 , pp. 303
- Chindalore, G.L.¹ Melloch, M.R.² Cooper J.A., Jr.³ Palmour, J.W.⁴ Irvine, K.G.⁵

28
- 11644310529
- M. Bassler, V. V. Afanas'ev, and G. Pensl, Mater. Sci. Forum, 264-268 (1998) 861.
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 861
- Bassler, M.¹ Afanas'ev, V.V.² Pensl, G.³

29
- 0001136342
- L. A. Lipkin and J. W. Palmour, J. Electron. Mater., 25 (1996) 909.
- (1996) J. Electron. Mater. , vol.25 , pp. 909
- Lipkin, L.A.¹ Palmour, J.W.²

30
- 0031697841
- K. Ueno, Mater.Sci.Forum, 264-268 (1998) 845.
- (1998) Mater.Sci.Forum , vol.264-268 , pp. 845
- Ueno, K.¹

31
- 0033100053
- H. Yano, F. Katafuchi, T. Kimoto, and H. Matsunami, IEEE Trans. Electron Dev., 46 (1999) 504.
- (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 504
- Yano, H.¹ Katafuchi, F.² Kimoto, T.³ Matsunami, H.⁴

32
- 0000088192
- W. Xie, J. N. Shenoy, S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., Appl. Phys. Lett. 68 (1996) 2231.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2231
- Xie, W.¹ Shenoy, J.N.² Sheppard, S.T.³ Melloch, M.R.⁴ Cooper J.A., Jr.⁵

33
- 0008536235
- E. G. Stein von Kamienski, F. Portheine, J. Stein, A Gölz, and H. Kurz, J. Appl. Phys. 79 (1996) 2529.
- (1996) J. Appl. Phys. , vol.79 , pp. 2529
- Von Kamienski, E.G.S.¹ Portheine, F.² Stein, J.³ Gölz, A.⁴ Kurz, H.⁵

34
- 0033097598
- J. Campi, Y. Shi, Y. Luo, F. Yan, J. H. Zhao, IEEE Trans. Electron Dev., 46 (1999) 511.
- (1999) IEEE Trans. Electron Dev. , vol.46 , pp. 511
- Campi, J.¹ Shi, Y.² Luo, Y.³ Yan, F.⁴ Zhao, J.H.⁵

35
- 4244081114
- V. V. Afanas'ev, A. Stesmans, and C. I. Harris, Mater. Sci. Forum, 264-268 (1998) 857.
- (1998) Mater. Sci. Forum , vol.264-268 , pp. 857
- Afanas'ev, V.V.¹ Stesmans, A.² Harris, C.I.³

36
- 0001035776
- V. V. Afanas'ev and A. Stesmans, Phys. Rev. Lett. 80 (1998) 5176.
- (1998) Phys. Rev. Lett. , vol.80 , pp. 5176
- Afanas'ev, V.V.¹ Stesmans, A.²

37
- 0345072493
- V. V. Afanas'ev and A. Stesmans, Mater. Sci. & Eng. B, 58 (1999) 56.
- (1999) Mater. Sci. & Eng. B , vol.58 , pp. 56
- Afanas'ev, V.V.¹ Stesmans, A.²

38
- 4243589720
- L. Patrick and W. J. Choyke, Phys. Rev. Lett., 2 (1959) 48.
- (1959) Phys. Rev. Lett. , vol.2 , pp. 48
- Patrick, L.¹ Choyke, W.J.²

39
- 0029327734
- V. V. Afanas'ev, M. Bassler, G. Pensl, and M. J. Schulz, Microelectron. Eng., 28 (1995) 197.
- (1995) Microelectron. Eng. , vol.28 , pp. 197
- Afanas'ev, V.V.¹ Bassler, M.² Pensl, G.³ Schulz, M.J.⁴

40
- 0000305522
- V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett., 69 (1996) 2252.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2252
- Afanas'ev, V.V.¹ Stesmans, A.²

41
- 0043210897
- V. V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M. J. Schulz, C. I. Harris, J. Appl. Phys., 55 (1999) 8292.
- (1999) J. Appl. Phys. , vol.55 , pp. 8292
- Afanas'ev, V.V.¹ Stesmans, A.² Bassler, M.³ Pensl, G.⁴ Schulz, M.J.⁵ Harris, C.I.⁶

42
- 30844431996
- E. Poindexter, Semicond. Sci. Technol., 4 (1989) 961.
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 961
- Poindexter, E.¹

43
- 0001170732
- A. Stesmans, Phys. Rev. B, 48 (1993) 2418.
- (1993) Phys. Rev. B , vol.48 , pp. 2418
- Stesmans, A.¹

44
- 0001519118
- G. Pensl, V. V. Afanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H. Strunk, M. Maier, and W. J. Choyke, Inst. Phys. Conf. Ser. No. 142 (1996) 275.
- (1996) Inst. Phys. Conf. Ser. No. 142 , vol.142 , pp. 275
- Pensl, G.¹ Afanas'ev, V.V.² Bassler, M.³ Schadt, M.⁴ Troffer, T.⁵ Heindl, J.⁶ Strunk, H.⁷ Maier, M.⁸ Choyke, W.J.⁹

45
- 0028731053
- B. Hometz, H.-J. Michel, and J. Halbritter, J. Mater. Res., 9 (1994) 3088.
- (1994) J. Mater. Res. , vol.9 , pp. 3088
- Hometz, B.¹ Michel, H.-J.² Halbritter, J.³

46
- 0001203064
- V. R. Vathulya, D. H. Wang, and M. H. White, Appl. Phys. Lett., 73 (1998) 2161.
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2161
- Vathulya, V.R.¹ Wang, D.H.² White, M.H.³

47
- 0031483190
- P. Måretensson, F. Owman, and L. I. Johansson, Phys. Stat. Sol. (b), 202 (1997) 501.
- (1997) Phys. Stat. Sol. (B) , vol.202 , pp. 501
- Måretensson, P.¹ Owman, F.² Johansson, L.I.³

48
- 36449001210
- E. Bano, T. Ouisse, L. DiCioccio, and S. Karmann, Appl. Phys. Lett., 65 (1994) 2723.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2723
- Bano, E.¹ Ouisse, T.² DiCioccio, L.³ Karmann, S.⁴

49
- 0032123083
- K. Ueno, R. Asai, and T. Tsuji, IEEE Electron Dev. Lett., 19 (1998) 244.
- (1998) IEEE Electron Dev. Lett. , vol.19 , pp. 244
- Ueno, K.¹ Asai, R.² Tsuji, T.³

50
- 0000661685
- V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 71 (1997) 3844.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3844
- Afanas'ev, V.V.¹ Stesmans, A.²

51
- 0000921617
- A. Chu, W. B. Fowler, Phys. Rev. B, 41 (1990) 5061.
- (1990) Phys. Rev. B , vol.41 , pp. 5061
- Chu, A.¹ Fowler, W.B.²

52
- 0001727826
- K. C. Snyder and W. B. Fowler, Phys. Rev. B, 48, (1993) 13238.
- (1993) Phys. Rev. B , vol.48 , pp. 13238
- Snyder, K.C.¹ Fowler, W.B.²

53
- 0027848103
- A G. Revesz, G. A. Brown, and H. L. Hughes, Mat. Res. Soc. Symp. Proc., 244 (1993) 555.
- (1993) Mat. Res. Soc. Symp. Proc. , vol.244 , pp. 555
- Revesz, A.G.¹ Brown, G.A.² Hughes, H.L.³

54
- 0027641108
- S. I. Raider, Microelectronic Eng., 22 (1993) 29.
- (1993) Microelectronic Eng. , vol.22 , pp. 29
- Raider, S.I.¹

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