Transition layers at the Si O2 SiC interface

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Zheleva, Tsvetanka ^a   Lelis, Aivars ^a   Duscher, Gerd ^b   Liu, Fude ^b,e   Levin, Igor ^c   Das, Mrinal ^d  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b North Carolina State University   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d Arkansas Power Electronics International Inc   (United States)

^e NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCES; INTERFACIAL TRAPS; MICRO-ELECTRONIC DEVICES; STRUCTURAL CHANGES; TRANSITION LAYERS;

SILICON CARBIDE;

SILICON;

EID: 47549117546     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949081     Document Type: Article

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