Electrical activation of high-concentration aluminum implanted in 4H-SiC

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4916-4922

  Negoro, Y ^a   Kimoto, T ^a   Matsunami, H ^a   Schmid, F ^b   Pensl, G ^b  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); HALL EFFECT; IONIZATION; MOS DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

ALUMINUM IMPLANTATION; ELECTRICAL ACTIVATION; HOLE MOBILITIES; IONIZATION ENERGY;

ALUMINUM;

EID: 9744284210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796518     Document Type: Article

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