Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Calcagno, L ^a   Ruggiero, A ^a   Roccaforte, F ^b   La Via, F ^b  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); ELECTRICAL BEHAVIOR; IONIZATION ENERGY;

DIFFUSION; ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; NICKEL COMPOUNDS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY BARRIER DIODES;

EID: 23844434431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1978969     Document Type: Article

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