Electronic properties of a 3C/4H SiC polytype heterojunction formed on the Si face

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Chandrashekhar, M V S ^a   Thomas, Christopher I ^a   Lu, Jie ^a   Spencer, M G ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROPOLYTYPE JUNCTIONS; HOLE CHARGE; HOLE GAS; POLARIZATION CHARGE;

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON; SILICON CARBIDE; VOLTAGE MEASUREMENT;

HETEROJUNCTIONS;

EID: 34248580968     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730738     Document Type: Article

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