Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1765-1768

  Choi, Kyoung Jin ^a   Han, Sang Youn ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; ETCHING; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0041430937     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581347     Document Type: Article

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