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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 295-298

Improvement of high temperature stability of nickel contacts on n-type 6H-SiC

(5) Roccaforte, F a,b La Via, F b Raineri, V b Calcagno, L c Musumeci, P c

a STMICROELECTRONICS (Italy)

b CNR IMETEM (Italy)

c INFM (Italy)

Author keywords

Ni 2 Si; Ohmic contacts; TLM

Indexed keywords

HIGH TEMPERATURE PROPERTIES; NICKEL; OHMIC CONTACTS; RAPID THERMAL ANNEALING; TRANSMISSION LINE THEORY; VACUUM APPLICATIONS; X RAY ANALYSIS;

SPECIFIC CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 0035852173 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00509-8 Document Type: Article

Times cited : (61)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.