Toward an ideal Schottky barrier on 3C -SiC

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Eriksson, Jens ^a,b   Weng, Ming Hung ^a   Roccaforte, Fabrizio ^a   Giannazzo, Filippo ^a   Leone, Stefano ^c   Raineri, Vito ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; BARRIER HEIGHTS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONTACT AREAS; CONTACT RADIUS; CONVENTIONAL CURRENTS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SIC SCHOTTKY DIODE;

ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; DIODES; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VOLTAGE MEASUREMENT;

SCHOTTKY BARRIER DIODES;

EID: 69549135530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211965     Document Type: Article

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