Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2719-2722

  McDonald, K ^a,c   Weller, R A ^a   Pantelides, S T ^a   Feldman, L C ^a   Chung, G Y ^b,d   Tin, C C ^b   Williams, J R ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d Sterling Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARACTERIZATION; COMPUTER SIMULATION; DEFECTS; DISSOLUTION; ELECTRON TRAPS; INTERFACES (MATERIALS); NITROGEN; PASSIVATION;

INTERFACE TRAP DENSITY;

SILICON CARBIDE;

EID: 0037348141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542935     Document Type: Article

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