Electrical activation of high concentrations of N + and P + ions implanted into 4H-SiC

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 549-554

  Laube, M ^a   Schmid, F ^a   Pensl, G ^a   Wagner, G ^b   Linnarsson, M ^c   Maier, M ^d  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CONCENTRATION; DONOR CONCENTRATIONS; ELECTRICAL ACTIVATION; HIGH CONCENTRATION; MEAN CONCENTRATIONS; N IMPLANTATION; P DONORS; P-TYPE; POST-IMPLANTATION; SIC EPILAYERS; UPPER LIMITS;

EPILAYERS; HALL EFFECT; SILICON CARBIDE;

SHEET RESISTANCE;

EID: 0036640013     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479462     Document Type: Article

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