Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 307-311

  Allerstam, F ^a   Gudjonsson G ^a   Olafsson H O ^a,c   Sveinbjornsson E O ^a   Rodle T ^b   Jos, R ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Frisk Software International ^*  (Iceland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DIELECTRIC RELAXATION; MOS CAPACITORS; OXIDATION; QUARTZ; SILICON CARBIDE;

CAPACITANCE-VOLTAGE (C-V); CHANNEL MOBILITY; INTERFACE STATE DENSITY; THERMAL DIELECTRIC RELAXATION CURRENT (TDRC) MEASUREMENTS;

MOSFET DEVICES;

EID: 34047206863     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/002     Document Type: Article

References (12)

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