Calibrated scanning spreading resistance microscopy profiling of carriers in III-V structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1662-1670

  Lu, R P ^a,b   Kavanagh, K L ^a,b   Dixon Warren, St J ^c   Kuhl, A ^c   SpringThorpe, A J ^c   Griswold, E ^c   Hillier, G ^c   Calder, I ^c   Ares R ^c   Streater, R ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SIMON FRASER UNIVERSITY   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRONIC DENSITY OF STATES; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

BIAS POLARITIES; DOPANT CONCENTRATION; FERMI LEVEL PINNING; SCANNING SPREADING RESISTANCE MICROSCOPY; SCHOTTKY JUNCTION; SURFACE CONTACT RESISTANCE;

CARRIER CONCENTRATION;

EID: 0035535372     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387458     Document Type: Conference Paper

References (15)

1. P. De Wolf, T. Clarysse, W. Vandervorst, L. Hellemans, Ph. Niedermann, and W. Hanni, J. Vac. Sci. Technol. B 16, 355 (1998).
2. G. Queirolo, J. Electrochem. Soc. 125, 1672 (1978).
3. R. C. Goodfellow, A. C. Carter, R. Davis, and C. Hill, Electron. Lett. 14, 328 (1978).
4. R. J. Hillard, R. G. Mazur, H. L. Berkowitz, and P. Rai-Choudhury, Solid State Technol. 119 (1989).
5. T. C. Chong et al., J. Vac. Sci. Technol. B 10, 456 (1992).
6. G. W. Eldridge et al., J. Vac. Sci. Technol. B 10, 463 (1992).
7. R. Kinder et al., Phys. Status Solidi 175, 631 (1999).
8. P. De Wolf, M. Geva, T. Hantschel, W. Vandervorst, and R. B. Bylsma, Appl. Phys. Lett. 73, 2155 (1998).
9. S. Richter, M. Geva, J. P. Garno, and R. N. Kleiman, Appl. Phys. Lett. 77, 456 (2000).
10. St. J. Dixon-Warren, R. P. Lu, and D. Macquistan, J. Vac. Sci. Technol. B (to be published).
11. R. Hull, F. A. Stevie, and D. Bahnck, Appl. Phys. Lett. 66, 341 (1995).
12. S. M. Sze and G. Gibbons, Appl. Phys. Lett. 8, 111 (1966).
13. Properties of Indium Phosphide (INSPEC, London, 1991).
14. ID Poisson/Schrödinger software, written by Greg Snider, Univ. of Notre Dame.
15. O. Wada and H. Hasegawa, InP-Based Materials and Devices: Physics and Technology (Wiley, New York, 1999).