Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 693-696

  Ciobanu, Florin ^a   Pensl, Gerhard ^a   Afanas'ev, Valeri ^b   Schöner, Adolf ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ACREO AB   (Sweden)

Author keywords

4H SiC MOS capacitor; Low density of interface states; Nitrogen implantation

Indexed keywords

DOPING (ADDITIVES); ION IMPLANTATION; NITROGEN; OXIDATION; SILICON CARBIDE; SURFACE CHEMISTRY;

GAUSSIAN NITROGEN PROFILES; LOW DENSITY OF INTERFACE STATES; NITROGEN IMPLANTATION; OXIDIZED LAYERS;

MOS CAPACITORS;

EID: 30344488654     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.693     Document Type: Conference Paper

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